Vishay Precision Group Single FETs, MOSFETs IRFIB6N60APBF

MOSFET N-CH 600V 5.5A TO220-3

600V 5.5A N-Channel MOSFET TO-220AB Product overview: IRFIB6N60APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 5.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 5.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIB6N60APBF can be used for catalog matching and distributor lookup.

N-Channel 600V 5.5A (Tc) 60W (Tc) Through Hole TO-220-3

Manufacturer: Vishay
Win Source Part Number: 138322-IRFIB6N60APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Family Name: IRFIB6N60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 3.3A, 10V
Alternative Parts (Cross-Reference): AOTF10N60L; MDFS10N60DTH; 2SK3569(STA4,Q); 2SK3569(MURATA,Q);
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited