Manufacturer: Vishay
Win Source Part Number: 124938-IRFIB5N65APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 5.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 1417pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 930 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
N-Channel 650V 5.1A (Tc) 60W (Tc) Through Hole TO-220-3
N CHANNEL MOSFET, 650V, 5.1A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:5.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 650V HEXFET MOSFET
MOSFET N-CH 650V 5.1A TO220-3
| Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 124938-IRFIB5N65APBF | IRFIB5N65APBF-ND | 63J6738 | IRFIB5N65APBF | IRFIB5N65APBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB5N65APBF | Single FETs, MOSFETs | N Channel Mosfet, 650V, 5.1A, To-220Fp; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 650 volts | ||||
| PD | 60000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
