Vishay Precision Group Single FETs, MOSFETs IRFIB5N65APBF

Description
N-Channel 650V 5.1A (Tc) 60W (Tc) Through Hole TO-220-3
  • Single FETs, MOSFETs - IRFIB5N65APBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB5N65APBF - 124938-IRFIB5N65APBF - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIB5N65APBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 650V, 5.1A, To-220Fp; Channel Type Vishay - 63J6738 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 650V 5.1A (Tc) 60W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFIB5N65APBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFIB5N65APBF-ND
Single FETs, MOSFETs IRFIB5N65APBF-ND
N-Channel 650V 5.1A (Tc) 60W (Tc) Through Hole TO-220-3

N-Channel 650V 5.1A (Tc) 60W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB5N65APBF - 124938-IRFIB5N65APBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB5N65APBF
124938-IRFIB5N65APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB5N65APBF 124938-IRFIB5N65APBF
Manufacturer: Vishay Win Source Part Number: 124938-IRFIB5N65APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 5.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1417pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 930 mOhm @ 3.1A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 124938-IRFIB5N65APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 5.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 1417pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 930 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFIB5N65APBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFIB5N65APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFIB5N65APBF
MOSFET N-CH 650V 5.1A TO220-3

MOSFET N-CH 650V 5.1A TO220-3

Supplier's Site
N Channel Mosfet, 650V, 5.1A, To-220Fp; Channel Type Vishay - 63J6738 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 650V, 5.1A, To-220Fp; Channel Type Vishay
63J6738
N Channel Mosfet, 650V, 5.1A, To-220Fp; Channel Type Vishay 63J6738
N CHANNEL MOSFET, 650V, 5.1A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:5.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 650V, 5.1A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:5.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFIB5N65APBF
MOSFET IRFIB5N65APBF
MOSFET N-CH 650V HEXFET MOSFET

MOSFET N-CH 650V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFIB5N65APBF-ND 124938-IRFIB5N65APBF IRFIB5N65APBF 63J6738 IRFIB5N65APBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIB5N65APBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 650V, 5.1A, To-220Fp; Channel Type Vishay MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3; TO-220-3 TO-220; TO-220-3 Full Pack, Isolated Tab TO-3; TO-220
V(BR)DSS 650 volts
PD 60000 milliwatts
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