Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFI9Z34GPBF

Description
P-Channel 60V 12A (Tc) 42W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
P-Channel 60V 12A (Tc) 42W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFI9Z34GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI9Z34GPBF-ND
Single FETs, MOSFETs IRFI9Z34GPBF-ND
P-Channel 60V 12A (Tc) 42W (Tc) Through Hole TO-220-3

P-Channel 60V 12A (Tc) 42W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9Z34GPBF - 116436-IRFI9Z34GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9Z34GPBF
116436-IRFI9Z34GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9Z34GPBF 116436-IRFI9Z34GPBF
Manufacturer: Vishay Win Source Part Number: 116436-IRFI9Z34GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 42W (Tc) Family Name: IRFI9Z34G Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 140 mOhm @ 7.2A, 10V Alternative Parts (Cross-Reference): 2SJ304(MBSH); 2SJ304(CANO); 2SJ304; Introduction Date: March 27, 2007 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 116436-IRFI9Z34GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 42W (Tc)
Family Name: IRFI9Z34G
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 1100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 140 mOhm @ 7.2A, 10V
Alternative Parts (Cross-Reference): 2SJ304(MBSH); 2SJ304(CANO); 2SJ304;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFI9Z34GPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFI9Z34GPBF
Single FETs, MOSFETs IRFI9Z34GPBF
MOSFET P-CH 60V 12A TO220-3

MOSFET P-CH 60V 12A TO220-3

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET P-CH -60V HEXFET MOSFET

MOSFET P-CH -60V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI9Z34GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI9Z34GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI9Z34GPBF
MOSFET P-CH 60V 12A TO220-3

MOSFET P-CH 60V 12A TO220-3

Supplier's Site
P Channel Mosfet, -60V, 12A, To-220; Channel Type Vishay - 63J6783 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -60V, 12A, To-220; Channel Type Vishay
63J6783
P Channel Mosfet, -60V, 12A, To-220; Channel Type Vishay 63J6783
P CHANNEL MOSFET, -60V, 12A, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

P CHANNEL MOSFET, -60V, 12A, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFI9Z34GPBF-ND 116436-IRFI9Z34GPBF IRFI9Z34GPBF IRFI9Z34GPBF IRFI9Z34GPBF 63J6783
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9Z34GPBF Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs P Channel Mosfet, -60V, 12A, To-220; Channel Type Vishay
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel P-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3; TO-220-3 TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; TO-220-3 Full Pack, Isolated Tab TO-3; TO-220
V(BR)DSS 60 volts 60 volts
PD 42000 milliwatts 42000 milliwatts
Unlock Full Specs
to access all available technical data