Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFI9640GPBF

Description
MOSFET P-CH 200V 6.1A TO220-3
Request a Quote Datasheet
Description
MOSFET P-CH 200V 6.1A TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFI9640GPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFI9640GPBF
Single FETs, MOSFETs IRFI9640GPBF
MOSFET P-CH 200V 6.1A TO220-3

MOSFET P-CH 200V 6.1A TO220-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9640GPBF - 069488-IRFI9640GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9640GPBF
069488-IRFI9640GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9640GPBF 069488-IRFI9640GPBF
Manufacturer: Vishay Win Source Part Number: 069488-IRFI9640GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 6.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 069488-IRFI9640GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 6.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFI9640GPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI9640GPBF-ND
Single FETs, MOSFETs IRFI9640GPBF-ND
P-Channel 200V 6.1A (Tc) 40W (Tc) Through Hole TO-220-3

P-Channel 200V 6.1A (Tc) 40W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET P-CH -200V HEXFET MOSFET

MOSFET P-CH -200V HEXFET MOSFET

Buy Now Datasheet
P Channel Mosfet, -200V, 6.1A, To-220Fp; Channel Type Vishay - 63J6791 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -200V, 6.1A, To-220Fp; Channel Type Vishay
63J6791
P Channel Mosfet, -200V, 6.1A, To-220Fp; Channel Type Vishay 63J6791
P CHANNEL MOSFET, -200V, 6.1A, TO-220FP; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:6.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:-RoHS Compliant: Yes

P CHANNEL MOSFET, -200V, 6.1A, TO-220FP; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:6.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:-RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI9640GPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI9640GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI9640GPBF
MOSFET P-CH 200V 6.1A TO220-3

MOSFET P-CH 200V 6.1A TO220-3

Supplier's Site
Transistor - 16347157 - Radwell International
Willingboro, NJ, United States
Transistor
16347157
Transistor 16347157
P CHANNEL MOSFET, -200V, 6.1A, TO-220FP; TRANSISTOR POLARITY:P CHANNEL; CONTINUOUS DRAIN CURRENT ID:-6.1A; DRAIN SOURCE VOLTAGE VDS:-200V; ON RESISTANCE RDS(ON):0.5OHM; RDS(ON) TEST VOLTAGE VGS:-10V; THRESHOLD VOLTAGE VGS:-4V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

P CHANNEL MOSFET, -200V, 6.1A, TO-220FP; TRANSISTOR POLARITY:P CHANNEL; CONTINUOUS DRAIN CURRENT ID:-6.1A; DRAIN SOURCE VOLTAGE VDS:-200V; ON RESISTANCE RDS(ON):0.5OHM; RDS(ON) TEST VOLTAGE VGS:-10V; THRESHOLD VOLTAGE VGS:-4V; MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number IRFI9640GPBF 069488-IRFI9640GPBF IRFI9640GPBF-ND IRFI9640GPBF 63J6791 IRFI9640GPBF 16347157
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9640GPBF Single FETs, MOSFETs MOSFET P Channel Mosfet, -200V, 6.1A, To-220Fp; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts 200 volts
IDSS 6100 milliamps 6100 milliamps
Unlock Full Specs
to access all available technical data