Manufacturer: Vishay
Win Source Part Number: 1046950-IRFI9634GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 4.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 680pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
P-Channel MOSFET, 250V, 4.1A, 1R, TO-220 Product overview: IRFI9634GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 250V, 4.1A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 4.1A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI9634GPBF can be used for catalog matching and distributor lookup.
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MOSFET, P-CH, 250V, 4.1A, TO-220FP ROHS COMPLIANT: YES
POWER FIELD-EFFECT TRANSISTOR, 4.1A I(D), 250V, 1OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220FP. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1046950-IRFI9634GPBF | 278-IRFI9634GPBF | 7084780 | 7084780P | IRFI9634GPBF-ND | IRFI9634GPBF | IRFI9634GPBF | 56AJ9880 | 16347153 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9634GPBF | P-Channel 250V 4.1A TO-220 MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 250V, 4.1A, To-220Fp Rohs Compliant Vishay | Transistor |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||||
| V(BR)DSS | 250 volts | ||||||||
| PD | 35000 milliwatts | 35000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |