Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9630GPBF IRFI9630GPBF

Description
Manufacturer: Vishay Win Source Part Number: 119785-IRFI9630GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.6A, 10V Alternative Parts (Cross-Reference): SFS9630YDTU; SFS9630; 2SJ410; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9630GPBF - 119785-IRFI9630GPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFI9630GPBF-ND - DigiKey
    DigiKey
  • Mosfet Transistor, P Channel, 4.3 A, 200 V, 800 Mohm, -10 V, -4 V Rohs Compliant Vishay - 38K2540 - Newark, An Avnet Company
    Newark, An Avnet Company
  • P Ch Mosfet, -200V, 4.3A, To-220Fp; Transistor Polarity Vishay - 63J6789 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI9630GPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 119785-IRFI9630GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.6A, 10V Alternative Parts (Cross-Reference): SFS9630YDTU; SFS9630; 2SJ410; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9630GPBF - 119785-IRFI9630GPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9630GPBF
119785-IRFI9630GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9630GPBF 119785-IRFI9630GPBF
Manufacturer: Vishay Win Source Part Number: 119785-IRFI9630GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.6A, 10V Alternative Parts (Cross-Reference): SFS9630YDTU; SFS9630; 2SJ410; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 119785-IRFI9630GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 4.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 2.6A, 10V
Alternative Parts (Cross-Reference): SFS9630YDTU; SFS9630; 2SJ410;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFI9630GPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI9630GPBF-ND
Single FETs, MOSFETs IRFI9630GPBF-ND
P-Channel 200V 4.3A (Tc) 35W (Tc) Through Hole TO-220-3

P-Channel 200V 4.3A (Tc) 35W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Mosfet Transistor, P Channel, 4.3 A, 200 V, 800 Mohm, -10 V, -4 V Rohs Compliant Vishay - 38K2540 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, 4.3 A, 200 V, 800 Mohm, -10 V, -4 V Rohs Compliant Vishay
38K2540
Mosfet Transistor, P Channel, 4.3 A, 200 V, 800 Mohm, -10 V, -4 V Rohs Compliant Vishay 38K2540
MOSFET Transistor, P Channel, 4.3 A, 200 V, 800 mohm, -10 V, -4 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, 4.3 A, 200 V, 800 mohm, -10 V, -4 V RoHS Compliant: Yes

Supplier's Site Datasheet
P Ch Mosfet, -200V, 4.3A, To-220Fp; Transistor Polarity Vishay - 63J6789 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Ch Mosfet, -200V, 4.3A, To-220Fp; Transistor Polarity Vishay
63J6789
P Ch Mosfet, -200V, 4.3A, To-220Fp; Transistor Polarity Vishay 63J6789
P CH MOSFET, -200V, 4.3A, TO-220FP; Transistor Polarity:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.3A; On Resistance Rds(on):0.8ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

P CH MOSFET, -200V, 4.3A, TO-220FP; Transistor Polarity:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.3A; On Resistance Rds(on):0.8ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI9630GPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI9630GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI9630GPBF
MOSFET P-CH 200V 4.3A TO220-3

MOSFET P-CH 200V 4.3A TO220-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFI9630GPBF
MOSFET IRFI9630GPBF
MOSFET P-CH -200V HEXFET MOSFET

MOSFET P-CH -200V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 119785-IRFI9630GPBF IRFI9630GPBF-ND 38K2540 63J6789 IRFI9630GPBF IRFI9630GPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9630GPBF Single FETs, MOSFETs Mosfet Transistor, P Channel, 4.3 A, 200 V, 800 Mohm, -10 V, -4 V Rohs Compliant Vishay P Ch Mosfet, -200V, 4.3A, To-220Fp; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 200 volts
PD 35000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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