Manufacturer: Vishay
Win Source Part Number: 119785-IRFI9630GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 4.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 2.6A, 10V
Alternative Parts (Cross-Reference): SFS9630YDTU; SFS9630; 2SJ410;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
P-Channel 200V 4.3A (Tc) 35W (Tc) Through Hole TO-220-3
MOSFET P-CH -200V HEXFET MOSFET
MOSFET P-CH 200V 4.3A TO220-3
MOSFET Transistor, P Channel, 4.3 A, 200 V, 800 mohm, -10 V, -4 V RoHS Compliant: Yes
P CH MOSFET, -200V, 4.3A, TO-220FP; Transistor Polarity:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.3A; On Resistance Rds(on):0.8ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 119785-IRFI9630GPBF | IRFI9630GPBF-ND | IRFI9630GPBF | IRFI9630GPBF | 38K2540 | 63J6789 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9630GPBF | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, P Channel, 4.3 A, 200 V, 800 Mohm, -10 V, -4 V Rohs Compliant Vishay | P Ch Mosfet, -200V, 4.3A, To-220Fp; Transistor Polarity Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 200 volts | |||||
| PD | 35000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) |
