Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9630GPBF IRFI9630GPBF

Description
Manufacturer: Vishay Win Source Part Number: 119785-IRFI9630GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.6A, 10V Alternative Parts (Cross-Reference): SFS9630YDTU; SFS9630; 2SJ410; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9630GPBF - 119785-IRFI9630GPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFI9630GPBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI9630GPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, P Channel, 4.3 A, 200 V, 800 Mohm, -10 V, -4 V Rohs Compliant Vishay - 38K2540 - Newark, An Avnet Company
    Newark, An Avnet Company
  • P Ch Mosfet, -200V, 4.3A, To-220Fp; Transistor Polarity Vishay - 63J6789 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 119785-IRFI9630GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.6A, 10V Alternative Parts (Cross-Reference): SFS9630YDTU; SFS9630; 2SJ410; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9630GPBF - 119785-IRFI9630GPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9630GPBF
119785-IRFI9630GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9630GPBF 119785-IRFI9630GPBF
Manufacturer: Vishay Win Source Part Number: 119785-IRFI9630GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.6A, 10V Alternative Parts (Cross-Reference): SFS9630YDTU; SFS9630; 2SJ410; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 119785-IRFI9630GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 4.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 800 mOhm @ 2.6A, 10V
Alternative Parts (Cross-Reference): SFS9630YDTU; SFS9630; 2SJ410;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFI9630GPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI9630GPBF-ND
Single FETs, MOSFETs IRFI9630GPBF-ND
P-Channel 200V 4.3A (Tc) 35W (Tc) Through Hole TO-220-3

P-Channel 200V 4.3A (Tc) 35W (Tc) Through Hole TO-220-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFI9630GPBF
MOSFET IRFI9630GPBF
MOSFET P-CH -200V HEXFET MOSFET

MOSFET P-CH -200V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI9630GPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI9630GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI9630GPBF
MOSFET P-CH 200V 4.3A TO220-3

MOSFET P-CH 200V 4.3A TO220-3

Supplier's Site
Mosfet Transistor, P Channel, 4.3 A, 200 V, 800 Mohm, -10 V, -4 V Rohs Compliant Vishay - 38K2540 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, 4.3 A, 200 V, 800 Mohm, -10 V, -4 V Rohs Compliant Vishay
38K2540
Mosfet Transistor, P Channel, 4.3 A, 200 V, 800 Mohm, -10 V, -4 V Rohs Compliant Vishay 38K2540
MOSFET Transistor, P Channel, 4.3 A, 200 V, 800 mohm, -10 V, -4 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, 4.3 A, 200 V, 800 mohm, -10 V, -4 V RoHS Compliant: Yes

Supplier's Site Datasheet
P Ch Mosfet, -200V, 4.3A, To-220Fp; Transistor Polarity Vishay - 63J6789 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Ch Mosfet, -200V, 4.3A, To-220Fp; Transistor Polarity Vishay
63J6789
P Ch Mosfet, -200V, 4.3A, To-220Fp; Transistor Polarity Vishay 63J6789
P CH MOSFET, -200V, 4.3A, TO-220FP; Transistor Polarity:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.3A; On Resistance Rds(on):0.8ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

P CH MOSFET, -200V, 4.3A, TO-220FP; Transistor Polarity:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.3A; On Resistance Rds(on):0.8ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 119785-IRFI9630GPBF IRFI9630GPBF-ND IRFI9630GPBF IRFI9630GPBF 38K2540 63J6789
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9630GPBF Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, P Channel, 4.3 A, 200 V, 800 Mohm, -10 V, -4 V Rohs Compliant Vishay P Ch Mosfet, -200V, 4.3A, To-220Fp; Transistor Polarity Vishay
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 200 volts
PD 35000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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