MOSFET P-CH 200V 2A TO220-3 Product overview: IRFI9610GPBF from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 2A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 2A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI9610GPBF can be used for catalog matching and distributor lookup.
P-Channel 200V 2A (Tc) 27W (Tc) Through Hole TO-220-3
Manufacturer: Vishay
Win Source Part Number: 1046949-IRFI9610GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 27W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 180pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
MOSFET P-CH -200V HEXFET MOSFET
P CHANNEL MOSFET, -200V, 2A, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET P-CH 200V 2A TO220-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFI9610GPBF | 742-IRFI9610GPBF-ND | 1046949-IRFI9610GPBF | 5432193 | 1780862 | IRFI9610GPBF | 63J6787 | IRFI9610GPBF |
| Product Name | 200V 2A TO220 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9610GPBF | MOSFETs | MOSFETs | MOSFET | P Channel Mosfet, -200V, 2A, To-220; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 27000 milliwatts | 27000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | Tube | TO-220; TO-220-3 Full Pack, Isolated Tab | TO-220; SOT3; TO-220-3 | TO-220; To-220fp | TO-220; TO-220 | TO-3; TO-220 | TO-220; TO-220-3 Full Pack, Isolated Tab | |
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube | |||||
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel |
