P-Channel 100V 7.7A (Tc) 42W (Tc) Through Hole TO-220-3
Manufacturer: Vishay
Win Source Part Number: 040720-IRFI9530GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 7.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 860pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 300 mOhm @ 4.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
MOSFET P-CH 100V 7.7A TO220-3
P-Channel MOSFET, 100V, 7.7A, 300mR, TO-220 Product overview: IRFI9530GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 100V, 7.7A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 7.7A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI9530GPBF can be used for catalog matching and distributor lookup.
MOSFET P-CH -100V HEXFET MOSFET
MOSFET, P-CH, 100V, 7.7A, 175DEG C, 38W; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET P-CH 100V 7.7A TO220-3
| DigiKey | RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFI9530GPBF-ND | 2567291 | 040720-IRFI9530GPBF | IRFI9530GPBF | 278-IRFI9530GPBF | IRFI9530GPBF | 38K2537 | IRFI9530GPBF |
| Product Name | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI9530GPBF | Single FETs, MOSFETs | P-Channel 100V 7.7A TO-220 MOSFET Transistor | MOSFET | Mosfet, P-Ch, 100V, 7.7A, 175Deg C, 38W; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||||
| Package Type | TO-220; TO-220-3 Full Pack, Isolated Tab | TO-220; TO-220 | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 Full Pack, Isolated Tab | TO-3 | TO-220; TO-220-3 Full Pack, Isolated Tab | ||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| PD | 42000 milliwatts | 42000 milliwatts | 42000 milliwatts |
