Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI830GPBF IRFI830GPBF

Description
Manufacturer: Vishay Win Source Part Number: 017609-IRFI830GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 3.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 610pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
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  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI830GPBF - Shenzhen Shengyu Electronics Technology Limited
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  • MOSFET N-CH 500V 3.1A TO220FP - 880-IRFI830GPBF - Utmel Electronic Limited
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Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017609-IRFI830GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 3.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 610pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI830GPBF - 017609-IRFI830GPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI830GPBF
017609-IRFI830GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI830GPBF 017609-IRFI830GPBF
Manufacturer: Vishay Win Source Part Number: 017609-IRFI830GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 3.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 610pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.9A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017609-IRFI830GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 3.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 610pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFI830GPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI830GPBF-ND
Single FETs, MOSFETs IRFI830GPBF-ND
N-Channel 500V 3.1A (Tc) 35W (Tc) Through Hole TO-220-3

N-Channel 500V 3.1A (Tc) 35W (Tc) Through Hole TO-220-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
N-Channel 500V 3.1A TO-220 MOSFET Transistor
278-IRFI830GPBF
N-Channel 500V 3.1A TO-220 MOSFET Transistor 278-IRFI830GPBF
N-Channel MOSFET, 500V, 3.1A, 1.5R, TO-220 Product overview: IRFI830GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 3.1A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3.1A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI830GPBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 500V, 3.1A, 1.5R, TO-220 Product overview: IRFI830GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 3.1A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3.1A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI830GPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 16347101 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16347101
Transistor 16347101
MOSFET TRANSISTOR, N CHANNEL, 3.1 AMP, 500 V, 1.5 OHM, 10 V, 4 V, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET TRANSISTOR, N CHANNEL, 3.1 AMP, 500 V, 1.5 OHM, 10 V, 4 V, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFI830GPBF
MOSFET IRFI830GPBF
MOSFET RECOMMENDED ALT 844-IRFI830G

MOSFET RECOMMENDED ALT 844-IRFI830G

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI830GPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI830GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI830GPBF
MOSFET N-CH 500V 3.1A TO220-3

MOSFET N-CH 500V 3.1A TO220-3

Supplier's Site
MOSFET N-CH 500V 3.1A TO220FP - 880-IRFI830GPBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 3.1A TO220FP
880-IRFI830GPBF
MOSFET N-CH 500V 3.1A TO220FP 880-IRFI830GPBF
MOSFET N-CH 500V 3.1A TO220FP

MOSFET N-CH 500V 3.1A TO220FP

Supplier's Site
Mosfet Transistor, N Channel, 3.1 A, 500 V, 1.5 Ohm, 10 V, 4 V Rohs Compliant Vishay - 38K2534 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 3.1 A, 500 V, 1.5 Ohm, 10 V, 4 V Rohs Compliant Vishay
38K2534
Mosfet Transistor, N Channel, 3.1 A, 500 V, 1.5 Ohm, 10 V, 4 V Rohs Compliant Vishay 38K2534
MOSFET Transistor, N Channel, 3.1 A, 500 V, 1.5 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 3.1 A, 500 V, 1.5 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017609-IRFI830GPBF IRFI830GPBF-ND 278-IRFI830GPBF 16347101 IRFI830GPBF IRFI830GPBF 880-IRFI830GPBF 38K2534
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI830GPBF Single FETs, MOSFETs N-Channel 500V 3.1A TO-220 MOSFET Transistor Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 500V 3.1A TO220FP Mosfet Transistor, N Channel, 3.1 A, 500 V, 1.5 Ohm, 10 V, 4 V Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 500 volts
PD 35000 milliwatts 35000 milliwatts 35000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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