Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI630GPBF IRFI630GPBF

Description
Manufacturer: Vishay Win Source Part Number: 205366-IRFI630GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 400 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI630GPBF - 205366-IRFI630GPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFI630GPBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI630GPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, N Channel, 5.9 A, 200 V, 400 Mohm, 10 V, 4 V Rohs Compliant Vishay - 38K2525 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 205366-IRFI630GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 400 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI630GPBF - 205366-IRFI630GPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI630GPBF
205366-IRFI630GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI630GPBF 205366-IRFI630GPBF
Manufacturer: Vishay Win Source Part Number: 205366-IRFI630GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 400 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 205366-IRFI630GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 400 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFI630GPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI630GPBF-ND
Single FETs, MOSFETs IRFI630GPBF-ND
N-Channel 200V 5.9A (Tc) 35W (Tc) Through Hole TO-220-3

N-Channel 200V 5.9A (Tc) 35W (Tc) Through Hole TO-220-3

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 200V 5.9A TO-220 MOSFET Transistor
278-IRFI630GPBF
N-Channel 200V 5.9A TO-220 MOSFET Transistor 278-IRFI630GPBF
N-Channel MOSFET, 200V, 5.9A, 400mR, TO-220 Product overview: IRFI630GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 5.9A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.9A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI630GPBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 200V, 5.9A, 400mR, TO-220 Product overview: IRFI630GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 5.9A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.9A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI630GPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFI630GPBF
MOSFET IRFI630GPBF
MOSFET N-CH 200V HEXFET MOSFET

MOSFET N-CH 200V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI630GPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI630GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI630GPBF
MOSFET N-CH 200V 5.9A TO220-3

MOSFET N-CH 200V 5.9A TO220-3

Supplier's Site
Mosfet Transistor, N Channel, 5.9 A, 200 V, 400 Mohm, 10 V, 4 V Rohs Compliant Vishay - 38K2525 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 5.9 A, 200 V, 400 Mohm, 10 V, 4 V Rohs Compliant Vishay
38K2525
Mosfet Transistor, N Channel, 5.9 A, 200 V, 400 Mohm, 10 V, 4 V Rohs Compliant Vishay 38K2525
MOSFET Transistor, N Channel, 5.9 A, 200 V, 400 mohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 5.9 A, 200 V, 400 mohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205366-IRFI630GPBF IRFI630GPBF-ND 278-IRFI630GPBF IRFI630GPBF IRFI630GPBF 38K2525
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI630GPBF Single FETs, MOSFETs N-Channel 200V 5.9A TO-220 MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 5.9 A, 200 V, 400 Mohm, 10 V, 4 V Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 200 volts
PD 35000 milliwatts 35000 milliwatts
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