Vishay Precision Group N-Channel 200V 5.9A TO-220 MOSFET Transistor IRFI630GPBF

Description
N-Channel MOSFET, 200V, 5.9A, 400mR, TO-220 Product overview: IRFI630GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 5.9A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.9A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI630GPBF can be used for catalog matching and distributor lookup.
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI630GPBF - 205366-IRFI630GPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFI630GPBF-ND - DigiKey
    DigiKey
  • Mosfet Transistor, N Channel, 5.9 A, 200 V, 400 Mohm, 10 V, 4 V Rohs Compliant Vishay - 38K2525 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI630GPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel MOSFET, 200V, 5.9A, 400mR, TO-220 Product overview: IRFI630GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 5.9A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.9A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI630GPBF can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 200V 5.9A TO-220 MOSFET Transistor
278-IRFI630GPBF
N-Channel 200V 5.9A TO-220 MOSFET Transistor 278-IRFI630GPBF
N-Channel MOSFET, 200V, 5.9A, 400mR, TO-220 Product overview: IRFI630GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 5.9A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.9A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI630GPBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 200V, 5.9A, 400mR, TO-220 Product overview: IRFI630GPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 5.9A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.9A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI630GPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI630GPBF - 205366-IRFI630GPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI630GPBF
205366-IRFI630GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI630GPBF 205366-IRFI630GPBF
Manufacturer: Vishay Win Source Part Number: 205366-IRFI630GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5.9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 400 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 205366-IRFI630GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 400 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFI630GPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFI630GPBF-ND
Single FETs, MOSFETs IRFI630GPBF-ND
N-Channel 200V 5.9A (Tc) 35W (Tc) Through Hole TO-220-3

N-Channel 200V 5.9A (Tc) 35W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Mosfet Transistor, N Channel, 5.9 A, 200 V, 400 Mohm, 10 V, 4 V Rohs Compliant Vishay - 38K2525 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 5.9 A, 200 V, 400 Mohm, 10 V, 4 V Rohs Compliant Vishay
38K2525
Mosfet Transistor, N Channel, 5.9 A, 200 V, 400 Mohm, 10 V, 4 V Rohs Compliant Vishay 38K2525
MOSFET Transistor, N Channel, 5.9 A, 200 V, 400 mohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 5.9 A, 200 V, 400 mohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFI630GPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFI630GPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFI630GPBF
MOSFET N-CH 200V 5.9A TO220-3

MOSFET N-CH 200V 5.9A TO220-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFI630GPBF
MOSFET IRFI630GPBF
MOSFET N-CH 200V HEXFET MOSFET

MOSFET N-CH 200V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-IRFI630GPBF 205366-IRFI630GPBF IRFI630GPBF-ND 38K2525 IRFI630GPBF IRFI630GPBF
Product Name N-Channel 200V 5.9A TO-220 MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI630GPBF Single FETs, MOSFETs Mosfet Transistor, N Channel, 5.9 A, 200 V, 400 Mohm, 10 V, 4 V Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
PD 35000 milliwatts 35000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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