Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI530GPBF IRFI530GPBF

Description
Manufacturer: Vishay Win Source Part Number: 1046934-IRFI530GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 9.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 160 mOhm @ 5.8A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1046934-IRFI530GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 9.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 160 mOhm @ 5.8A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
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Suppliers

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Product
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Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI530GPBF - 1046934-IRFI530GPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI530GPBF
1046934-IRFI530GPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI530GPBF 1046934-IRFI530GPBF
Manufacturer: Vishay Win Source Part Number: 1046934-IRFI530GPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 9.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 670pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 160 mOhm @ 5.8A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046934-IRFI530GPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 9.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 670pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 160 mOhm @ 5.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1046934-IRFI530GPBF IRFI530GPBF-ND IRFI530GPBF IRFI530GPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI530GPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts
PD 42000 milliwatts
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