N-Channel 600V 320mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
N CHANNEL MOSFET, 600V, 320mA, HD-1; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:320mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 600V 320MA 4DIP
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 4.4 Ohms;ID 0.32A;HD-1;PD 1W;VGS +/-20V;-55
| DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFDC20PBF-ND | 19K8148 | IRFDC20PBF | 70078902 |
| Product Name | Single FETs, MOSFETs | N Channel Mosfet, 600V, 320Ma, Hd-1; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 4.4 Ohms;ID 0.32A;HD-1;PD 1W;VGS +/-20V;-55 |
| Polarity | N-Channel | N-Channel | N-Channel | |
| Package Type | "4-DIP (0.300"", 7.62mm)" | TO-3 | 4-DIP (0.300, 7.62mm) | HD-1 |
| IDSS | 320 milliamps | |||
| Packing Method | Tube; Tube |
