MOSFET P-CH 100V 1A 4DIP Product overview: IRFD9123 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD9123 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 083743-IRFD9123
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: 4-HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 390pF @ 25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 600mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
DISCONTINUED BY MANUFACTURER, MOSFET, P-CHANNEL, 100V, 1 AMP (TA), THROUGH HOLE, 4-HVM DIP. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFD9123 | 083743-IRFD9123 | 66825755 |
| Product Name | 100V 1A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9123 | Transistor |
| Package Type | Tube | SOT3; 4-HVMDIP |