Vishay Intertechnology, Inc. Transistor IRFD9123

Description
DISCONTINUED BY MANUFACTURER, MOSFET, P-CHANNEL, 100V, 1 AMP (TA), THROUGH HOLE, 4-HVM DIP. FREE 2 YEAR RADWELL WARRANTY
  • Transistor - 66825755 - Radwell International
    Radwell International
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9123 - 083743-IRFD9123 - Win Source Electronics
    Win Source Electronics
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Description
DISCONTINUED BY MANUFACTURER, MOSFET, P-CHANNEL, 100V, 1 AMP (TA), THROUGH HOLE, 4-HVM DIP. FREE 2 YEAR RADWELL WARRANTY
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistor - 66825755 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
66825755
Transistor 66825755
DISCONTINUED BY MANUFACTURER, MOSFET, P-CHANNEL, 100V, 1 AMP (TA), THROUGH HOLE, 4-HVM DIP. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, MOSFET, P-CHANNEL, 100V, 1 AMP (TA), THROUGH HOLE, 4-HVM DIP. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9123 - 083743-IRFD9123 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9123
083743-IRFD9123
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9123 083743-IRFD9123
Manufacturer: Vishay Win Source Part Number: 083743-IRFD9123 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 4-HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 390pF @ 25V Maximum Rds On at Id,Vgs: 600 mOhm @ 600mA, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 083743-IRFD9123
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: 4-HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 390pF @ 25V
Maximum Rds On at Id,Vgs: 600 mOhm @ 600mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Radwell International Win Source Electronics
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 66825755 083743-IRFD9123
Product Name Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9123
Polarity P-Channel; P-Channel
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