MOSFET P-CH 100V 1A 4DIP
Manufacturer: Vishay
Win Source Part Number: 017593-IRFD9120PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Family Name: IRFD9120
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 390pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 600mA, 10V
Alternative Parts (Cross-Reference): IRFD9120; SiHFD9120-E3;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
P-Channel MOSFET, 100V, 1A, 600mR, DIP Product overview: IRFD9120PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 100V, 1A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1A, DIP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD9120PBF can be used for catalog matching and distributor lookup.
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| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Radwell International | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFD9120PBF | 017593-IRFD9120PBF | 278-IRFD9120PBF | IRFD9120PBF-ND | 2567284 | 16347005 | IRFD9120PBF | 19K8166 | 70078900 | IRFD9120PBF | IRFD9120PBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9120PBF | P-Channel 100V 1A DIP MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Transistor | MOSFET | P Channel Mosfet, -100V, 1A, Hd-1; Channel Type Vishay | MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.6Ohm;ID -1A;HD-1;PD 1.3W;VGS +/-20V;-55d | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||||
| V(BR)DSS | 100 volts | 100 volts | -100 volts | 100 volts | |||||||
| IDSS | 1000 milliamps | 1000 milliamps | |||||||||
| PD | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts |
