Vishay Precision Group Single FETs, MOSFETs IRFD9120PBF

MOSFET P-CH 100V 1A 4DIP

P-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

P channel Mosfet

P channel Mosfet

P channel Mosfet

P-Channel MOSFET, 100V, 1A, 600mR, DIP Product overview: IRFD9120PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 100V, 1A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1A, DIP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD9120PBF can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 017593-IRFD9120PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Family Name: IRFD9120
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 390pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 600mA, 10V
Alternative Parts (Cross-Reference): IRFD9120; SiHFD9120-E3;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance