P-Channel 60V 1.6A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
MOSFET P-CH 60V 1.6A 4DIP
Manufacturer: Vishay
Win Source Part Number: 128996-IRFD9020PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 4V @ 1μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 570pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 960mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
MOSFET P-CH 60V 1.6A 4DIP
MOSFET P-CH -60V HEXFET MOSFET HEXDI
P CHANNEL MOSFET, -60V, 1.6A, HD-1; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFD9020PBF-ND | IRFD9020PBF | 128996-IRFD9020PBF | IRFD9020PBF | IRFD9020PBF | 19K8163 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9020PBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | P Channel Mosfet, -60V, 1.6A, Hd-1; Channel Type Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||
| Package Type | "4-DIP (0.300"", 7.62mm)" | 4-DIP (0.300", 7.62mm) | SOT3; 4-DIP, Hexdip, HVMDIP | 570 pF @ 25 V | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | 60 volts |
