Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9020PBF IRFD9020PBF

Description
Manufacturer: Vishay Win Source Part Number: 128996-IRFD9020PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 4V @ 1μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 570pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 960mA, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 128996-IRFD9020PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 4V @ 1μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 570pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 960mA, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9020PBF - 128996-IRFD9020PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9020PBF
128996-IRFD9020PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9020PBF 128996-IRFD9020PBF
Manufacturer: Vishay Win Source Part Number: 128996-IRFD9020PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.6A (Ta) Gate-Source Threshold Voltage: 4V @ 1μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 570pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 280 mOhm @ 960mA, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 128996-IRFD9020PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.6A (Ta)
Gate-Source Threshold Voltage: 4V @ 1μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 570pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 960mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFD9020PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD9020PBF-ND
Single FETs, MOSFETs IRFD9020PBF-ND
P-Channel 60V 1.6A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

P-Channel 60V 1.6A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
Single FETs, MOSFETs - IRFD9020PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFD9020PBF
Single FETs, MOSFETs IRFD9020PBF
MOSFET P-CH 60V 1.6A 4DIP

MOSFET P-CH 60V 1.6A 4DIP

Supplier's Site Datasheet
P Channel Mosfet, -60V, 1.6A, Hd-1; Channel Type Vishay - 19K8163 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -60V, 1.6A, Hd-1; Channel Type Vishay
19K8163
P Channel Mosfet, -60V, 1.6A, Hd-1; Channel Type Vishay 19K8163
P CHANNEL MOSFET, -60V, 1.6A, HD-1; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

P CHANNEL MOSFET, -60V, 1.6A, HD-1; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET P-CH -60V HEXFET MOSFET HEXDI

MOSFET P-CH -60V HEXFET MOSFET HEXDI

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD9020PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD9020PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD9020PBF
MOSFET P-CH 60V 1.6A 4DIP

MOSFET P-CH 60V 1.6A 4DIP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 128996-IRFD9020PBF IRFD9020PBF-ND IRFD9020PBF 19K8163 IRFD9020PBF IRFD9020PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9020PBF Single FETs, MOSFETs Single FETs, MOSFETs P Channel Mosfet, -60V, 1.6A, Hd-1; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 60 volts 60 volts
PD 1300 milliwatts 1300 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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