Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9014PBF IRFD9014PBF

Description
Manufacturer: Vishay Win Source Part Number: 017592-IRFD9014PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.1A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 270pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 660mA, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9014PBF - 017592-IRFD9014PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFD9014PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRFD9014PBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD9014PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 16346981 - Radwell International
    Radwell International
  • P Channel Mosfet, -60V, 1.1A, Hd-1; Channel Type Vishay - 19K8162 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017592-IRFD9014PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.1A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 270pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 660mA, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9014PBF - 017592-IRFD9014PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9014PBF
017592-IRFD9014PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9014PBF 017592-IRFD9014PBF
Manufacturer: Vishay Win Source Part Number: 017592-IRFD9014PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.1A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 270pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 660mA, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 017592-IRFD9014PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.1A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 270pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 660mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFD9014PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFD9014PBF
Single FETs, MOSFETs IRFD9014PBF
MOSFET P-CH 60V 1.1A 4DIP

MOSFET P-CH 60V 1.1A 4DIP

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFD9014PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD9014PBF-ND
Single FETs, MOSFETs IRFD9014PBF-ND
P-Channel 60V 1.1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

P-Channel 60V 1.1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
P-Channel Through-Hole 60V 1.1A MOSFET Transistor
278-IRFD9014PBF
P-Channel Through-Hole 60V 1.1A MOSFET Transistor 278-IRFD9014PBF
P-Channel MOSFET, 60V, 1.1A, 500mR, Through Hole DIP Product overview: IRFD9014PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Through-Hole, 60V, 1.1A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 60V, 1.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD9014PBF can be used for catalog matching and distributor lookup.

P-Channel MOSFET, 60V, 1.1A, 500mR, Through Hole DIP Product overview: IRFD9014PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Through-Hole, 60V, 1.1A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 60V, 1.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD9014PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD9014PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD9014PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD9014PBF
MOSFET P-CH 60V 1.1A 4DIP

MOSFET P-CH 60V 1.1A 4DIP

Supplier's Site
Transistor - 16346981 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16346981
Transistor 16346981
P CHANNEL MOSFET, -60V, 1.1A, HD-1, TRANSISTOR POLARITY:P CHANNEL, DRAIN SOURCE VOLTAGE VDS:60V, CONTINUOUS DRAIN CURRENT ID:1.1A, ON RESISTANCE RDS(ON):0.5OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

P CHANNEL MOSFET, -60V, 1.1A, HD-1, TRANSISTOR POLARITY:P CHANNEL, DRAIN SOURCE VOLTAGE VDS:60V, CONTINUOUS DRAIN CURRENT ID:1.1A, ON RESISTANCE RDS(ON):0.5OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
P Channel Mosfet, -60V, 1.1A, Hd-1; Channel Type Vishay - 19K8162 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -60V, 1.1A, Hd-1; Channel Type Vishay
19K8162
P Channel Mosfet, -60V, 1.1A, Hd-1; Channel Type Vishay 19K8162
P CHANNEL MOSFET, -60V, 1.1A, HD-1; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

P CHANNEL MOSFET, -60V, 1.1A, HD-1; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Radwell International Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017592-IRFD9014PBF IRFD9014PBF IRFD9014PBF-ND 278-IRFD9014PBF IRFD9014PBF 16346981 19K8162
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9014PBF Single FETs, MOSFETs Single FETs, MOSFETs P-Channel Through-Hole 60V 1.1A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor P Channel Mosfet, -60V, 1.1A, Hd-1; Channel Type Vishay
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
V(BR)DSS 60 volts 60 volts
PD 1300 milliwatts 1300 milliwatts 1300 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 C (-67 F)
Unlock Full Specs
to access all available technical data