P-Channel 60V 1.1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
MOSFET P-CH 60V 1.1A 4DIP
Manufacturer: Vishay
Win Source Part Number: 017592-IRFD9014PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.1A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 270pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 660mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
P-Channel MOSFET, 60V, 1.1A, 500mR, Through Hole DIP Product overview: IRFD9014PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Through-Hole, 60V, 1.1A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 60V, 1.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD9014PBF can be used for catalog matching and distributor lookup.
P CHANNEL MOSFET, -60V, 1.1A, HD-1; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
P CHANNEL MOSFET, -60V, 1.1A, HD-1, TRANSISTOR POLARITY:P CHANNEL, DRAIN SOURCE VOLTAGE VDS:60V, CONTINUOUS DRAIN CURRENT ID:1.1A, ON RESISTANCE RDS(ON):0.5OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET P-CH 60V 1.1A 4DIP
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | IRFD9014PBF-ND | IRFD9014PBF | 017592-IRFD9014PBF | 278-IRFD9014PBF | 19K8162 | 16346981 | IRFD9014PBF |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9014PBF | P-Channel Through-Hole 60V 1.1A MOSFET Transistor | P Channel Mosfet, -60V, 1.1A, Hd-1; Channel Type Vishay | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||
| Package Type | "4-DIP (0.300"", 7.62mm)" | 4-DIP (0.300", 7.62mm) | SOT3; 4-DIP, Hexdip, HVMDIP | TO-3 | 4-DIP (0.300, 7.62mm) | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts |
