Vishay Precision Group Single FETs, MOSFETs IRFD9014PBF

Description
MOSFET P-CH 60V 1.1A 4DIP
  • Single FETs, MOSFETs - IRFD9014PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IRFD9014PBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9014PBF - 017592-IRFD9014PBF - Win Source Electronics
    Win Source Electronics
  • P Channel Mosfet, -60V, 1.1A, Hd-1; Channel Type Vishay - 19K8162 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD9014PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 16346981 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
MOSFET P-CH 60V 1.1A 4DIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFD9014PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFD9014PBF
Single FETs, MOSFETs IRFD9014PBF
MOSFET P-CH 60V 1.1A 4DIP

MOSFET P-CH 60V 1.1A 4DIP

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFD9014PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD9014PBF-ND
Single FETs, MOSFETs IRFD9014PBF-ND
P-Channel 60V 1.1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

P-Channel 60V 1.1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9014PBF - 017592-IRFD9014PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9014PBF
017592-IRFD9014PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9014PBF 017592-IRFD9014PBF
Manufacturer: Vishay Win Source Part Number: 017592-IRFD9014PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.1A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 270pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 500 mOhm @ 660mA, 10V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 017592-IRFD9014PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.1A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 270pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 500 mOhm @ 660mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
P Channel Mosfet, -60V, 1.1A, Hd-1; Channel Type Vishay - 19K8162 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -60V, 1.1A, Hd-1; Channel Type Vishay
19K8162
P Channel Mosfet, -60V, 1.1A, Hd-1; Channel Type Vishay 19K8162
P CHANNEL MOSFET, -60V, 1.1A, HD-1; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

P CHANNEL MOSFET, -60V, 1.1A, HD-1; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD9014PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD9014PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD9014PBF
MOSFET P-CH 60V 1.1A 4DIP

MOSFET P-CH 60V 1.1A 4DIP

Supplier's Site
Transistor - 16346981 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16346981
Transistor 16346981
P CHANNEL MOSFET, -60V, 1.1A, HD-1, TRANSISTOR POLARITY:P CHANNEL, DRAIN SOURCE VOLTAGE VDS:60V, CONTINUOUS DRAIN CURRENT ID:1.1A, ON RESISTANCE RDS(ON):0.5OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

P CHANNEL MOSFET, -60V, 1.1A, HD-1, TRANSISTOR POLARITY:P CHANNEL, DRAIN SOURCE VOLTAGE VDS:60V, CONTINUOUS DRAIN CURRENT ID:1.1A, ON RESISTANCE RDS(ON):0.5OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number IRFD9014PBF IRFD9014PBF-ND 017592-IRFD9014PBF 19K8162 IRFD9014PBF 16346981
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD9014PBF P Channel Mosfet, -60V, 1.1A, Hd-1; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 1100 milliamps 1100 milliamps
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