Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFD214PBF

Description
N-Channel 250V 450mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
  • Single FETs, MOSFETs - IRFD214PBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD214PBF - 1046849-IRFD214PBF - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD214PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 250V 450mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFD214PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD214PBF-ND
Single FETs, MOSFETs IRFD214PBF-ND
N-Channel 250V 450mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

N-Channel 250V 450mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD214PBF - 1046849-IRFD214PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD214PBF
1046849-IRFD214PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD214PBF 1046849-IRFD214PBF
Manufacturer: Vishay Win Source Part Number: 1046849-IRFD214PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 450mA (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 140pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 Ohm @ 270mA, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046849-IRFD214PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 450mA (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 140pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 Ohm @ 270mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD214PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD214PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD214PBF
MOSFET N-CH 250V 450MA 4DIP

MOSFET N-CH 250V 450MA 4DIP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFD214PBF-ND 1046849-IRFD214PBF IRFD214PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD214PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "4-DIP (0.300"", 7.62mm)" SOT3; 4-DIP, Hexdip, HVMDIP 8.2 nC @ 10 V
V(BR)DSS 250 volts
Unlock Full Specs
to access all available technical data