Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD213 IRFD213

Description
Manufacturer: Vishay Win Source Part Number: 1046848-IRFD213 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 450mA (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 140pF @ 25V Maximum Rds On at Id,Vgs: 2 Ohm @ 270mA, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1046848-IRFD213 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 450mA (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 140pF @ 25V Maximum Rds On at Id,Vgs: 2 Ohm @ 270mA, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD213 - 1046848-IRFD213 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD213
1046848-IRFD213
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD213 1046848-IRFD213
Manufacturer: Vishay Win Source Part Number: 1046848-IRFD213 Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 450mA (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 140pF @ 25V Maximum Rds On at Id,Vgs: 2 Ohm @ 270mA, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046848-IRFD213
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 450mA (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 140pF @ 25V
Maximum Rds On at Id,Vgs: 2 Ohm @ 270mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now
200V MOSFET Transistor - 278-IRFD213 - ERSAELECTRONICS PTE. LTD.
Singapore
200V MOSFET Transistor
278-IRFD213
200V MOSFET Transistor 278-IRFD213
MOSFET N-Chan 200V 0.6 Amp Product overview: IRFD213 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD213 can be used for catalog matching and distributor lookup.

MOSFET N-Chan 200V 0.6 Amp Product overview: IRFD213 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD213 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 74187850 - Radwell International
Willingboro, NJ, United States
Transistor
74187850
Transistor 74187850
TRANSISTOR. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1046848-IRFD213 278-IRFD213 74187850
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD213 200V MOSFET Transistor Transistor
Polarity N-Channel; N-Channel N-Channel
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