Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD210PBF IRFD210PBF

Description
Manufacturer: Vishay Win Source Part Number: 017591-IRFD210PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 600mA (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 140pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 360mA, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD210PBF - 017591-IRFD210PBF - Win Source Electronics
    Win Source Electronics
  • MOSFETs - 1780916 - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - IRFD210PBF-ND - DigiKey
    DigiKey
  • Transistor - 16346945 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD210PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 200V, 600Ma, Hd-1; Channel Type Vishay - 19K8155 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 0.6A;HD-1;PD 1W;VGS +/-20V;VF 2 - 70078894 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017591-IRFD210PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 600mA (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 140pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 360mA, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD210PBF - 017591-IRFD210PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD210PBF
017591-IRFD210PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD210PBF 017591-IRFD210PBF
Manufacturer: Vishay Win Source Part Number: 017591-IRFD210PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 600mA (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.2nC @ 10V Max Input Capacitance: 140pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 360mA, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017591-IRFD210PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 600mA (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.2nC @ 10V
Max Input Capacitance: 140pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 360mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
MOSFETs - 1780916 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1780916
MOSFETs 1780916
MOSFET N-Channel 200V 0.6A HVMDIP4

MOSFET N-Channel 200V 0.6A HVMDIP4

Supplier's Site
Single FETs, MOSFETs - IRFD210PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD210PBF-ND
Single FETs, MOSFETs IRFD210PBF-ND
N-Channel 200V 600mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

N-Channel 200V 600mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
Transistor - 16346945 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16346945
Transistor 16346945
N CHANNEL MOSFET, HD-1, TRANSISTOR POLARITY: N CHANNEL, DRAIN SOURCE VOLTAGE VDS:200V, CONTINUOUS DRAIN CURRENT ID:600MA, ON RESISTANCE RDS(ON):1.5OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, HD-1, TRANSISTOR POLARITY: N CHANNEL, DRAIN SOURCE VOLTAGE VDS:200V, CONTINUOUS DRAIN CURRENT ID:600MA, ON RESISTANCE RDS(ON):1.5OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFD210PBF
MOSFET IRFD210PBF
MOSFET N-CH 200V HEXFET MOSFET HEXDI

MOSFET N-CH 200V HEXFET MOSFET HEXDI

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD210PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD210PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD210PBF
MOSFET N-CH 200V 600MA 4DIP

MOSFET N-CH 200V 600MA 4DIP

Supplier's Site
N Channel Mosfet, 200V, 600Ma, Hd-1; Channel Type Vishay - 19K8155 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 200V, 600Ma, Hd-1; Channel Type Vishay
19K8155
N Channel Mosfet, 200V, 600Ma, Hd-1; Channel Type Vishay 19K8155
N CHANNEL MOSFET, 200V, 600mA, HD-1; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:600mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 200V, 600mA, HD-1; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:600mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 0.6A;HD-1;PD 1W;VGS +/-20V;VF 2 - 70078894 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 0.6A;HD-1;PD 1W;VGS +/-20V;VF 2
70078894
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 0.6A;HD-1;PD 1W;VGS +/-20V;VF 2 70078894
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 0.6A;HD-1;PD 1W;VGS +/-20V;VF 2

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 0.6A;HD-1;PD 1W;VGS +/-20V;VF 2

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017591-IRFD210PBF 1780916 IRFD210PBF-ND 16346945 IRFD210PBF IRFD210PBF 19K8155 70078894
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD210PBF MOSFETs Single FETs, MOSFETs Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 200V, 600Ma, Hd-1; Channel Type Vishay MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 1.5 Ohms;ID 0.6A;HD-1;PD 1W;VGS +/-20V;VF 2
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 200 volts 200 volts
PD 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type SOT3; 4-DIP, Hexdip, HVMDIP Hvmdip "4-DIP (0.300"", 7.62mm)" 4-DIP (0.300, 7.62mm) TO-3 HD-1
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