Manufacturer: Vishay
Win Source Part Number: 017588-IRFD024PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.5A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 640pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
N-Channel MOSFET, 60V, 2.5A, 100mR Rds On, DIP Product overview: IRFD024PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 2.5A, DIP. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.5A, DIP, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD024PBF can be used for catalog matching and distributor lookup.
N-Channel 60V 2.5A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
MOSFET, N-CH, 60V, 2.5A, 175DEG C, 1.3W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.1Ohm;ID 2.5A;HD-1;PD 1.3W;VGS +/-20V;Qg 25
MOSFET N-CH 60V 2.5A 4DIP
MOSFET RECOMMENDED ALT 844-IRFD024
MOSFET N-CH 60V 2.5A 4-DIP
TRANSISTOR, CONTINUOUS DRAIN CURRENT ID: 2.5 AMP, DRAIN SOURCE VOLTAGE VDS: 60 V, TEST VOLTAGE VGS: 10 V, ON RESISTANCE RDS(ON): 100M OHM; RDS(ON), THRESHOLD VOLTAGE VGS:4V, N CHANNEL, MOSFET. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 017588-IRFD024PBF | 278-IRFD024PBF | IRFD024PBF-ND | 97K1983 | 70078891 | IRFD024PBF | IRFD024PBF | 880-IRFD024PBF | 16346929 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD024PBF | N-Channel 60V 2.5A DIP MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 2.5A, 175Deg C, 1.3W; Channel Type Vishay | MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.1Ohm;ID 2.5A;HD-1;PD 1.3W;VGS +/-20V;Qg 25 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-CH 60V 2.5A 4-DIP | Transistor |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||||
| PD | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | SOT3; 4-DIP, Hexdip, HVMDIP | "4-DIP (0.300"", 7.62mm)" | TO-3 | HD-1 | 4-DIP (0.300, 7.62mm) |
