Vishay Precision Group MOSFETs IRFD020PBF

Description
N channel ;VBRDSS 60 V; RDSon -- mOhm
  • MOSFETs - 1808673 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1808317 - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - IRFD020PBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD020PBF - 069468-IRFD020PBF - Win Source Electronics
    Win Source Electronics
  • N Channel Mosfet, 50V, 2.4A, Hd-1; Channel Type Vishay - 19K8151 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD020PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N channel ;VBRDSS 60 V; RDSon -- mOhm
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 1808673 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808673
MOSFETs 1808673
N channel ;VBRDSS 60 V; RDSon -- mOhm

N channel ;VBRDSS 60 V; RDSon -- mOhm

Supplier's Site
MOSFETs - 1808317 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808317
MOSFETs 1808317
N channel ;VBRDSS 60 V; RDSon -- mOhm

N channel ;VBRDSS 60 V; RDSon -- mOhm

Supplier's Site
Single FETs, MOSFETs - IRFD020PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD020PBF-ND
Single FETs, MOSFETs IRFD020PBF-ND
N-Channel 50V 2.4A (Tc) 1W (Tc) Through Hole 4-HVMDIP

N-Channel 50V 2.4A (Tc) 1W (Tc) Through Hole 4-HVMDIP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD020PBF - 069468-IRFD020PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD020PBF
069468-IRFD020PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD020PBF 069468-IRFD020PBF
Manufacturer: Vishay Win Source Part Number: 069468-IRFD020PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 2.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 1.4A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 069468-IRFD020PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 2.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
N Channel Mosfet, 50V, 2.4A, Hd-1; Channel Type Vishay - 19K8151 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 50V, 2.4A, Hd-1; Channel Type Vishay
19K8151
N Channel Mosfet, 50V, 2.4A, Hd-1; Channel Type Vishay 19K8151
N CHANNEL MOSFET, 50V, 2.4A, HD-1; Channel Type:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:2.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 50V, 2.4A, HD-1; Channel Type:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:2.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFD020PBF
MOSFET IRFD020PBF
MOSFET N-CH 60V HEXFET MOSFET HEXDI

MOSFET N-CH 60V HEXFET MOSFET HEXDI

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD020PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD020PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD020PBF
MOSFET N-CH 50V 2.4A 4DIP

MOSFET N-CH 50V 2.4A 4DIP

Supplier's Site

Technical Specifications

  RS Components, Ltd. DigiKey Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1808673 IRFD020PBF-ND 069468-IRFD020PBF 19K8151 IRFD020PBF IRFD020PBF
Product Name MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD020PBF N Channel Mosfet, 50V, 2.4A, Hd-1; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type HVMDIP "4-DIP (0.300"", 7.62mm)" SOT3; 4-DIP, Hexdip, HVMDIP TO-3 4-DIP (0.300, 7.62mm)
Polarity N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 50 volts
PD 1000 milliwatts
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