Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD020PBF IRFD020PBF

Description
Manufacturer: Vishay Win Source Part Number: 069468-IRFD020PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 2.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 1.4A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD020PBF - 069468-IRFD020PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFD020PBF-ND - DigiKey
    DigiKey
  • MOSFETs - 1808673 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1808317 - RS Components, Ltd.
    RS Components, Ltd.
  • N Channel Mosfet, 50V, 2.4A, Hd-1; Channel Type Vishay - 19K8151 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD020PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 069468-IRFD020PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 2.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 1.4A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD020PBF - 069468-IRFD020PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD020PBF
069468-IRFD020PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD020PBF 069468-IRFD020PBF
Manufacturer: Vishay Win Source Part Number: 069468-IRFD020PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 2.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 24nC @ 10V Max Input Capacitance: 400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 1.4A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 069468-IRFD020PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 2.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFD020PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD020PBF-ND
Single FETs, MOSFETs IRFD020PBF-ND
N-Channel 50V 2.4A (Tc) 1W (Tc) Through Hole 4-HVMDIP

N-Channel 50V 2.4A (Tc) 1W (Tc) Through Hole 4-HVMDIP

Buy Now Datasheet
MOSFETs - 1808673 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808673
MOSFETs 1808673
N channel ;VBRDSS 60 V; RDSon -- mOhm

N channel ;VBRDSS 60 V; RDSon -- mOhm

Supplier's Site
MOSFETs - 1808317 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1808317
MOSFETs 1808317
N channel ;VBRDSS 60 V; RDSon -- mOhm

N channel ;VBRDSS 60 V; RDSon -- mOhm

Supplier's Site
N Channel Mosfet, 50V, 2.4A, Hd-1; Channel Type Vishay - 19K8151 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 50V, 2.4A, Hd-1; Channel Type Vishay
19K8151
N Channel Mosfet, 50V, 2.4A, Hd-1; Channel Type Vishay 19K8151
N CHANNEL MOSFET, 50V, 2.4A, HD-1; Channel Type:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:2.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 50V, 2.4A, HD-1; Channel Type:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:2.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD020PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD020PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD020PBF
MOSFET N-CH 50V 2.4A 4DIP

MOSFET N-CH 50V 2.4A 4DIP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFD020PBF
MOSFET IRFD020PBF
MOSFET N-CH 60V HEXFET MOSFET HEXDI

MOSFET N-CH 60V HEXFET MOSFET HEXDI

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 069468-IRFD020PBF IRFD020PBF-ND 1808673 19K8151 IRFD020PBF IRFD020PBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD020PBF Single FETs, MOSFETs MOSFETs N Channel Mosfet, 50V, 2.4A, Hd-1; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 50 volts
PD 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data