Vishay Precision Group Single FETs, MOSFETs IRFD014PBF

Description
MOSFET N-CH 60V 1.7A 4DIP
Request a Quote Datasheet
Description
MOSFET N-CH 60V 1.7A 4DIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFD014PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFD014PBF
Single FETs, MOSFETs IRFD014PBF
MOSFET N-CH 60V 1.7A 4DIP

MOSFET N-CH 60V 1.7A 4DIP

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFD014PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD014PBF-ND
Single FETs, MOSFETs IRFD014PBF-ND
N-Channel 60V 1.7A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

N-Channel 60V 1.7A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD014PBF - 134522-IRFD014PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD014PBF
134522-IRFD014PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD014PBF 134522-IRFD014PBF
Manufacturer: Vishay Win Source Part Number: 134522-IRFD014PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 1.7A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 310pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 134522-IRFD014PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 310pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Mosfet,N-CH;60V;1.7A;PDIP-4 - 70079028 - Allied Electronics, Inc.
Fort Worth, TX, USA
Mosfet,N-CH;60V;1.7A;PDIP-4
70079028
Mosfet,N-CH;60V;1.7A;PDIP-4 70079028
Mosfet,N-CH;60V;1.7A ;PDIP-4

Mosfet,N-CH;60V;1.7A;PDIP-4

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD014PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD014PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD014PBF
MOSFET N-CH 60V 1.7A 4DIP

MOSFET N-CH 60V 1.7A 4DIP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 60V HEXFET MOSFET HEXDI

MOSFET N-CH 60V HEXFET MOSFET HEXDI

Buy Now Datasheet
N Channel Mosfet, 60V, 1.7A, Hd-1; Transistor Polarity Vishay - 19K8150 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 1.7A, Hd-1; Transistor Polarity Vishay
19K8150
N Channel Mosfet, 60V, 1.7A, Hd-1; Transistor Polarity Vishay 19K8150
N CHANNEL MOSFET, 60V, 1.7A, HD-1; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; On Resistance Rds(on):0.2ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 1.7A, HD-1; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; On Resistance Rds(on):0.2ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 1.7 A, 60 V, 200 Mohm, 10 V, 4 V Rohs Compliant Vishay - 97K1981 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 1.7 A, 60 V, 200 Mohm, 10 V, 4 V Rohs Compliant Vishay
97K1981
Mosfet Transistor, N Channel, 1.7 A, 60 V, 200 Mohm, 10 V, 4 V Rohs Compliant Vishay 97K1981
MOSFET Transistor, N Channel, 1.7 A, 60 V, 200 mohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 1.7 A, 60 V, 200 mohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFD014PBF IRFD014PBF-ND 134522-IRFD014PBF 70079028 IRFD014PBF IRFD014PBF 19K8150 97K1981
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD014PBF Mosfet,N-CH;60V;1.7A;PDIP-4 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 60V, 1.7A, Hd-1; Transistor Polarity Vishay Mosfet Transistor, N Channel, 1.7 A, 60 V, 200 Mohm, 10 V, 4 V Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts 60 volts
IDSS 1700 milliamps 1700 milliamps
PD 1300 milliwatts 1300 milliwatts 1300 milliwatts
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