MOSFET N-CH 60V 1.7A 4DIP
N-Channel 60V 1.7A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
Manufacturer: Vishay
Win Source Part Number: 134522-IRFD014PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 310pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
Mosfet,N-CH;60V;1.7A
MOSFET N-CH 60V 1.7A 4DIP
MOSFET N-CH 60V HEXFET MOSFET HEXDI
N CHANNEL MOSFET, 60V, 1.7A, HD-1; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.7A; On Resistance Rds(on):0.2ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 1.7 A, 60 V, 200 mohm, 10 V, 4 V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFD014PBF | IRFD014PBF-ND | 134522-IRFD014PBF | 70079028 | IRFD014PBF | IRFD014PBF | 19K8150 | 97K1981 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD014PBF | Mosfet,N-CH;60V;1.7A;PDIP-4 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 60V, 1.7A, Hd-1; Transistor Polarity Vishay | Mosfet Transistor, N Channel, 1.7 A, 60 V, 200 Mohm, 10 V, 4 V Rohs Compliant Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| IDSS | 1700 milliamps | 1700 milliamps | ||||||
| PD | 1300 milliwatts | 1300 milliwatts | 1300 milliwatts |