Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFD010PBF

Description
N-Channel 50V 1.7A (Tc) 1W (Tc) Through Hole 4-HVMDIP
Request a Quote Datasheet
Description
N-Channel 50V 1.7A (Tc) 1W (Tc) Through Hole 4-HVMDIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFD010PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFD010PBF-ND
Single FETs, MOSFETs IRFD010PBF-ND
N-Channel 50V 1.7A (Tc) 1W (Tc) Through Hole 4-HVMDIP

N-Channel 50V 1.7A (Tc) 1W (Tc) Through Hole 4-HVMDIP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD010PBF - 109907-IRFD010PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD010PBF
109907-IRFD010PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD010PBF 109907-IRFD010PBF
Manufacturer: Vishay Win Source Part Number: 109907-IRFD010PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 4-DIP, Hexdip, HVMDIP Dimension: 4-DIP (0.300", 7.62mm) Drain-Source Breakdown Voltage: 50V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 250pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 860mA, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 109907-IRFD010PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DIP, Hexdip, HVMDIP
Dimension: 4-DIP (0.300", 7.62mm)
Drain-Source Breakdown Voltage: 50V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 860mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFD010PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFD010PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFD010PBF
MOSFET N-CH 50V 1.7A 4DIP

MOSFET N-CH 50V 1.7A 4DIP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFD010PBF-ND 109907-IRFD010PBF IRFD010PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFD010PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "4-DIP (0.300"", 7.62mm)" SOT3; 4-DIP, Hexdip, HVMDIP 4-DIP (0.300, 7.62mm)
V(BR)DSS 50 volts
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