Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFD010

N-Channel 50V 1.7A (Tc) 1W (Tc) Through Hole 4-HVMDIP

MOSFET N-CH 50V 1.7A 4DIP Product overview: IRFD010 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFD010 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187553-IRFD010
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 4-DIP
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 50V
Id - Continuous Drain Current: 1.7A
Rds On (Maximum) at Id, Vgs: 200mOhm at 860mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 13nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 25V