N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
MOSFET N-CH 1000V 3.1A TO220AB
MOSFET, N-CH, 1KV, 3.1A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:3.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-IRFBG30PBF-BE3-ND | IRFBG30PBF-BE3 | 78AH6356 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 1Kv, 3.1A, To-220Ab; Channel Type Vishay |
| Polarity | N-Channel |
