Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFBG30

Description
N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFBG30-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBG30-ND
Single FETs, MOSFETs IRFBG30-ND
N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB

N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Singapore
1000V 3.1A MOSFET Transistor
278-IRFBG30
1000V 3.1A MOSFET Transistor 278-IRFBG30
MOSFET N-CH 1000V 3.1A TO220AB Product overview: IRFBG30 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBG30 can be used for catalog matching and distributor lookup.

MOSFET N-CH 1000V 3.1A TO220AB Product overview: IRFBG30 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBG30 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBG30 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBG30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBG30
MOSFET N-CH 1000V 3.1A TO220AB

MOSFET N-CH 1000V 3.1A TO220AB

Supplier's Site
Transistor - 16352801 - Radwell International
Willingboro, NJ, United States
Transistor
16352801
Transistor 16352801
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3.1A I(D), 1000V, 5OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 3.1A I(D), 1000V, 5OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number IRFBG30-ND 278-IRFBG30 IRFBG30 16352801
Product Name Single FETs, MOSFETs 1000V 3.1A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel
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