Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF30STRLPBF IRFBF30STRLPBF

Description
Manufacturer: Vishay Win Source Part Number: 121165-IRFBF30STRLPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 121165-IRFBF30STRLPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF30STRLPBF - 121165-IRFBF30STRLPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF30STRLPBF
121165-IRFBF30STRLPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF30STRLPBF 121165-IRFBF30STRLPBF
Manufacturer: Vishay Win Source Part Number: 121165-IRFBF30STRLPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (D2Pak) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.7 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 121165-IRFBF30STRLPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263 (D2Pak)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.7 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
900V 3.6A MOSFET Transistor
278-IRFBF30STRLPBF
900V 3.6A MOSFET Transistor 278-IRFBF30STRLPBF
Trans MOSFET N-CH 900V 3.6A 3-Pin(2+Tab) D2PAK T/R Product overview: IRFBF30STRLPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBF30STRLPBF can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 900V 3.6A 3-Pin(2+Tab) D2PAK T/R Product overview: IRFBF30STRLPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBF30STRLPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFBF30STRLPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBF30STRLPBFTR-ND
Single FETs, MOSFETs IRFBF30STRLPBFTR-ND
N-Channel 900V 3.6A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 900V 3.6A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - IRFBF30STRLPBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBF30STRLPBFCT-ND
Single FETs, MOSFETs IRFBF30STRLPBFCT-ND
N-Channel 900V 3.6A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 900V 3.6A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Single FETs, MOSFETs - IRFBF30STRLPBFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBF30STRLPBFDKR-ND
Single FETs, MOSFETs IRFBF30STRLPBFDKR-ND
N-Channel 900V 3.6A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 900V 3.6A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBF30STRLPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBF30STRLPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBF30STRLPBF
MOSFET N-CH 900V 3.6A TO263

MOSFET N-CH 900V 3.6A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 121165-IRFBF30STRLPBF 278-IRFBF30STRLPBF IRFBF30STRLPBFTR-ND IRFBF30STRLPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF30STRLPBF 900V 3.6A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 900 volts
PD 125000 milliwatts 125000 milliwatts
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