900V 1.7A N-Channel MOSFET, 8R Rds On, D2PAK Product overview: IRFBF20STRLPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBF20STRLPBF can be used for catalog matching and distributor lookup.
N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Vishay
Win Source Part Number: 017585-IRFBF20STRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
N CHANNEL MOSFET, 900V, 1.7A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, N CHANNEL, 900V, 1.7A, TO-263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; On Resistance Rds(on):8ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET, N-CH, 900V, 1.7A, TO-263 ROHS COMPLIANT: YES
MOSFET N-CH 900V 1.7A D2PAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFBF20STRLPBF | 742-IRFBF20STRLPBFTR-ND | 017585-IRFBF20STRLPBF | 41K2159 | 05W6846 | 56AJ9861 | IRFBF20STRLPBF |
| Product Name | N-Channel 900V 1.7A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20STRLPBF | N Channel Mosfet, 900V, 1.7A, D2Pak; Channel Type Vishay | Mosfet, N Channel, 900V, 1.7A, To-263-3; Transistor Polarity Vishay | Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| PD | 54000 milliwatts | 3100 to 54000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-3 | TO-3; TO-263 | TO-3; TO-263 | Surface Mount |
