Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20STRLPBF IRFBF20STRLPBF

Description
Manufacturer: Vishay Win Source Part Number: 017585-IRFBF20STRLPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20STRLPBF - 017585-IRFBF20STRLPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 742-IRFBF20STRLPBFCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 742-IRFBF20STRLPBFTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 742-IRFBF20STRLPBFDKR-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 900V, 1.7A, D2Pak; Channel Type Vishay - 41K2159 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Channel, 900V, 1.7A, To-263-3; Transistor Polarity Vishay - 05W6846 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay - 56AJ9861 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBF20STRLPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017585-IRFBF20STRLPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20STRLPBF - 017585-IRFBF20STRLPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20STRLPBF
017585-IRFBF20STRLPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20STRLPBF 017585-IRFBF20STRLPBF
Manufacturer: Vishay Win Source Part Number: 017585-IRFBF20STRLPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017585-IRFBF20STRLPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 742-IRFBF20STRLPBFCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-IRFBF20STRLPBFCT-ND
Single FETs, MOSFETs 742-IRFBF20STRLPBFCT-ND
N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 742-IRFBF20STRLPBFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-IRFBF20STRLPBFTR-ND
Single FETs, MOSFETs 742-IRFBF20STRLPBFTR-ND
N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - 742-IRFBF20STRLPBFDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-IRFBF20STRLPBFDKR-ND
Single FETs, MOSFETs 742-IRFBF20STRLPBFDKR-ND
N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
N Channel Mosfet, 900V, 1.7A, D2Pak; Channel Type Vishay - 41K2159 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 900V, 1.7A, D2Pak; Channel Type Vishay
41K2159
N Channel Mosfet, 900V, 1.7A, D2Pak; Channel Type Vishay 41K2159
N CHANNEL MOSFET, 900V, 1.7A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 900V, 1.7A, D2PAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 900V, 1.7A, To-263-3; Transistor Polarity Vishay - 05W6846 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 900V, 1.7A, To-263-3; Transistor Polarity Vishay
05W6846
Mosfet, N Channel, 900V, 1.7A, To-263-3; Transistor Polarity Vishay 05W6846
MOSFET, N CHANNEL, 900V, 1.7A, TO-263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; On Resistance Rds(on):8ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

MOSFET, N CHANNEL, 900V, 1.7A, TO-263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; On Resistance Rds(on):8ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay - 56AJ9861 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay
56AJ9861
Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay 56AJ9861
MOSFET, N-CH, 900V, 1.7A, TO-263 ROHS COMPLIANT: YES

MOSFET, N-CH, 900V, 1.7A, TO-263 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBF20STRLPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBF20STRLPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBF20STRLPBF
MOSFET N-CH 900V 1.7A D2PAK

MOSFET N-CH 900V 1.7A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 017585-IRFBF20STRLPBF 742-IRFBF20STRLPBFCT-ND 41K2159 05W6846 56AJ9861 IRFBF20STRLPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20STRLPBF Single FETs, MOSFETs N Channel Mosfet, 900V, 1.7A, D2Pak; Channel Type Vishay Mosfet, N Channel, 900V, 1.7A, To-263-3; Transistor Polarity Vishay Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 900 volts
PD 3100 to 54000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data