Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20SPBF IRFBF20SPBF

Description
Manufacturer: Vishay Win Source Part Number: 017584-IRFBF20SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017584-IRFBF20SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20SPBF - 017584-IRFBF20SPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20SPBF
017584-IRFBF20SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20SPBF 017584-IRFBF20SPBF
Manufacturer: Vishay Win Source Part Number: 017584-IRFBF20SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017584-IRFBF20SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFBF20SPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBF20SPBF-ND
Single FETs, MOSFETs IRFBF20SPBF-ND
N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
N-Channel SMD 900V 1.7A MOSFET Transistor
278-IRFBF20SPBF
N-Channel SMD 900V 1.7A MOSFET Transistor 278-IRFBF20SPBF
900V 1.7A N-Channel MOSFET, 8 Ohm, D2PAK, Surface Mount Product overview: IRFBF20SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 900V, 1.7A, 8 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 900V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBF20SPBF can be used for catalog matching and distributor lookup.

900V 1.7A N-Channel MOSFET, 8 Ohm, D2PAK, Surface Mount Product overview: IRFBF20SPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 900V, 1.7A, 8 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 900V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBF20SPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
N Channel Mosfet, 900V, 1.7A D2-Pak; Channel Type Vishay - 63J6699 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 900V, 1.7A D2-Pak; Channel Type Vishay
63J6699
N Channel Mosfet, 900V, 1.7A D2-Pak; Channel Type Vishay 63J6699
N CHANNEL MOSFET, 900V, 1.7A D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 900V, 1.7A D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay - 56AJ9860 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay
56AJ9860
Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay 56AJ9860
MOSFET, N-CH, 900V, 1.7A, TO-263 ROHS COMPLIANT: YES

MOSFET, N-CH, 900V, 1.7A, TO-263 ROHS COMPLIANT: YES

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 900V HEXFET MOSFET D2-PA

MOSFET N-CH 900V HEXFET MOSFET D2-PA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBF20SPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBF20SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBF20SPBF
MOSFET N-CH 900V 1.7A D2PAK

MOSFET N-CH 900V 1.7A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 017584-IRFBF20SPBF IRFBF20SPBF-ND 278-IRFBF20SPBF 63J6699 56AJ9860 IRFBF20SPBF IRFBF20SPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20SPBF Single FETs, MOSFETs N-Channel SMD 900V 1.7A MOSFET Transistor N Channel Mosfet, 900V, 1.7A D2-Pak; Channel Type Vishay Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 900 volts
PD 3100 to 54000 milliwatts 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1208S-AE - 855021-2SA1208S-AE - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor - QPD1008L - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
3 suppliers