Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20SPBF IRFBF20SPBF

Description
Manufacturer: Vishay Win Source Part Number: 017584-IRFBF20SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20SPBF - 017584-IRFBF20SPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFBF20SPBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBF20SPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 900V, 1.7A D2-Pak; Channel Type Vishay - 63J6699 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay - 56AJ9860 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017584-IRFBF20SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20SPBF - 017584-IRFBF20SPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20SPBF
017584-IRFBF20SPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20SPBF 017584-IRFBF20SPBF
Manufacturer: Vishay Win Source Part Number: 017584-IRFBF20SPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017584-IRFBF20SPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFBF20SPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBF20SPBF-ND
Single FETs, MOSFETs IRFBF20SPBF-ND
N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBF20SPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBF20SPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBF20SPBF
MOSFET N-CH 900V 1.7A D2PAK

MOSFET N-CH 900V 1.7A D2PAK

Supplier's Site
N Channel Mosfet, 900V, 1.7A D2-Pak; Channel Type Vishay - 63J6699 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 900V, 1.7A D2-Pak; Channel Type Vishay
63J6699
N Channel Mosfet, 900V, 1.7A D2-Pak; Channel Type Vishay 63J6699
N CHANNEL MOSFET, 900V, 1.7A D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 900V, 1.7A D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay - 56AJ9860 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay
56AJ9860
Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay 56AJ9860
MOSFET, N-CH, 900V, 1.7A, TO-263 ROHS COMPLIANT: YES

MOSFET, N-CH, 900V, 1.7A, TO-263 ROHS COMPLIANT: YES

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFBF20SPBF
MOSFET IRFBF20SPBF
MOSFET N-CH 900V HEXFET MOSFET D2-PA

MOSFET N-CH 900V HEXFET MOSFET D2-PA

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017584-IRFBF20SPBF IRFBF20SPBF-ND IRFBF20SPBF 63J6699 56AJ9860 IRFBF20SPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20SPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 900V, 1.7A D2-Pak; Channel Type Vishay Mosfet, N-Ch, 900V, 1.7A, To-263 Rohs Compliant Vishay MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 900 volts
PD 3100 to 54000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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