Vishay Precision Group Single FETs, MOSFETs IRFBF20PBF

Description
MOSFET N-CH 900V 1.7A TO220AB
Request a Quote Datasheet
Description
MOSFET N-CH 900V 1.7A TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFBF20PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFBF20PBF
Single FETs, MOSFETs IRFBF20PBF
MOSFET N-CH 900V 1.7A TO220AB

MOSFET N-CH 900V 1.7A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFBF20PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBF20PBF-ND
Single FETs, MOSFETs IRFBF20PBF-ND
N-Channel 900V 1.7A (Tc) 54W (Tc) Through Hole TO-220AB

N-Channel 900V 1.7A (Tc) 54W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20PBF - 1046846-IRFBF20PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20PBF
1046846-IRFBF20PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20PBF 1046846-IRFBF20PBF
Manufacturer: Vishay Win Source Part Number: 1046846-IRFBF20PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046846-IRFBF20PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 54W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBF20PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBF20PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBF20PBF
MOSFET N-CH 900V 1.7A TO220AB

MOSFET N-CH 900V 1.7A TO220AB

Supplier's Site
Mosfet, N-Ch, 900V, 1.7A, 150Deg C, 54W; Channel Type Vishay - 38K2469 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 1.7A, 150Deg C, 54W; Channel Type Vishay
38K2469
Mosfet, N-Ch, 900V, 1.7A, 150Deg C, 54W; Channel Type Vishay 38K2469
MOSFET, N-CH, 900V, 1.7A, 150DEG C, 54W; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 900V, 1.7A, 150DEG C, 54W; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFBF20PBF IRFBF20PBF-ND 1046846-IRFBF20PBF IRFBF20PBF 38K2469
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20PBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 900V, 1.7A, 150Deg C, 54W; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 900 volts 900 volts
IDSS 1700 milliamps 1700 milliamps
Unlock Full Specs
to access all available technical data