N-Channel MOSFET, 900V, 1.7A, 8 Ohm, TO-220AB Product overview: IRFBF20PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 1.7A, 8 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 1.7A, 8 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBF20PBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 900V 1.7A TO220AB
Manufacturer: Vishay
Win Source Part Number: 1046846-IRFBF20PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 54W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
N-Channel 900V 1.7A (Tc) 54W (Tc) Through Hole TO-220AB
MOSFET, N-CH, 900V, 1.7A, 150DEG C, 54W; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 900V 1.7A TO220AB
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFBF20PBF | IRFBF20PBF | 1046846-IRFBF20PBF | IRFBF20PBF-ND | 38K2469 | IRFBF20PBF |
| Product Name | N-Channel 900V 1.7A 8 Ohm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20PBF | Single FETs, MOSFETs | Mosfet, N-Ch, 900V, 1.7A, 150Deg C, 54W; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 54000 milliwatts | 54000 milliwatts | 54000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
