Vishay Precision Group Single FETs, MOSFETs IRFBF20PBF

Description
N-Channel 900V 1.7A (Tc) 54W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 900V 1.7A (Tc) 54W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFBF20PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBF20PBF-ND
Single FETs, MOSFETs IRFBF20PBF-ND
N-Channel 900V 1.7A (Tc) 54W (Tc) Through Hole TO-220AB

N-Channel 900V 1.7A (Tc) 54W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20PBF - 1046846-IRFBF20PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20PBF
1046846-IRFBF20PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20PBF 1046846-IRFBF20PBF
Manufacturer: Vishay Win Source Part Number: 1046846-IRFBF20PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 54W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046846-IRFBF20PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 54W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel 900V 1.7A 8 Ohm MOSFET Transistor
278-IRFBF20PBF
N-Channel 900V 1.7A 8 Ohm MOSFET Transistor 278-IRFBF20PBF
N-Channel MOSFET, 900V, 1.7A, 8 Ohm, TO-220AB Product overview: IRFBF20PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 1.7A, 8 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 1.7A, 8 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBF20PBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 900V, 1.7A, 8 Ohm, TO-220AB Product overview: IRFBF20PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 900V, 1.7A, 8 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 1.7A, 8 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBF20PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFBF20PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFBF20PBF
Single FETs, MOSFETs IRFBF20PBF
MOSFET N-CH 900V 1.7A TO220AB

MOSFET N-CH 900V 1.7A TO220AB

Supplier's Site Datasheet
Mosfet, N-Ch, 900V, 1.7A, 150Deg C, 54W; Channel Type Vishay - 38K2469 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 900V, 1.7A, 150Deg C, 54W; Channel Type Vishay
38K2469
Mosfet, N-Ch, 900V, 1.7A, 150Deg C, 54W; Channel Type Vishay 38K2469
MOSFET, N-CH, 900V, 1.7A, 150DEG C, 54W; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 900V, 1.7A, 150DEG C, 54W; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBF20PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBF20PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBF20PBF
MOSFET N-CH 900V 1.7A TO220AB

MOSFET N-CH 900V 1.7A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFBF20PBF-ND 1046846-IRFBF20PBF 278-IRFBF20PBF IRFBF20PBF 38K2469 IRFBF20PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBF20PBF N-Channel 900V 1.7A 8 Ohm MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 900V, 1.7A, 150Deg C, 54W; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-3 TO-220; TO-220-3
V(BR)DSS 900 volts 900 volts
PD 54000 milliwatts 54000 milliwatts 54000 milliwatts
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