Vishay Intertechnology, Inc. 800V 4.1A MOSFET Transistor IRFBE30STRLPBF

Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK T/R Product overview: IRFBE30STRLPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 4.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBE30STRLPBF can be used for catalog matching and distributor lookup.

N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

Manufacturer: Vishay
Win Source Part Number: 1046845-IRFBE30STRLPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 4.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance