Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBE30STRLPBF IRFBE30STRLPBF

Description
Manufacturer: Vishay Win Source Part Number: 1046845-IRFBE30STRLP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 4.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1046845-IRFBE30STRLP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 4.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBE30STRLPBF - 1046845-IRFBE30STRLPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBE30STRLPBF
1046845-IRFBE30STRLPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBE30STRLPBF 1046845-IRFBE30STRLPBF
Manufacturer: Vishay Win Source Part Number: 1046845-IRFBE30STRLP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 4.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1046845-IRFBE30STRLPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 4.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFBE30STRLPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBE30STRLPBFTR-ND
Single FETs, MOSFETs IRFBE30STRLPBFTR-ND
N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - IRFBE30STRLPBFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBE30STRLPBFDKR-ND
Single FETs, MOSFETs IRFBE30STRLPBFDKR-ND
N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - IRFBE30STRLPBFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBE30STRLPBFCT-ND
Single FETs, MOSFETs IRFBE30STRLPBFCT-ND
N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 800V 4.1A 125W

MOSFET 800V 4.1A 125W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBE30STRLPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBE30STRLPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBE30STRLPBF
MOSFET N-CH 800V 4.1A D2PAK

MOSFET N-CH 800V 4.1A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1046845-IRFBE30STRLPBF IRFBE30STRLPBFTR-ND IRFBE30STRLPBF IRFBE30STRLPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBE30STRLPBF Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 800 volts
PD 125000 milliwatts
Unlock Full Specs
to access all available technical data