Vishay Precision Group N Channel Mosfet, 800V, 4.1A To-220; Channel Type Vishay IRFBE30PBF.

The N Channel MOSFET from Vishay, part number 26AC0501, features a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) rating of 4.1A at a case temperature of 25¬8C. It has a low on-resistance (R_DS(on)) of 3.0Oc when a gate-source voltage (V_GS) of 10V is applied. The device is designed for fast switching applications and is compliant with the RoHS directive. This MOSFET is housed in a TO-220AB package, which is suitable for commercial and industrial applications with power dissipation levels up to approximately 50W. The thermal resistance ratings indicate a maximum junction-to-ambient thermal resistance (R_thJA) of 62¬8C/W, allowing for effective heat dissipation. Key specifications include a gate-source threshold voltage (V_GS(th)) ranging from 2.0V to 4.0V, a total gate charge (Q_g) of 78nC, and a maximum power dissipation of 125W at 25¬8C. The device also supports repetitive avalanche ratings, making it robust for various applications. Engineers considering this MOSFET should evaluate its specifications against their project requirements, particularly in high-voltage applications where reliability and thermal management are critical.