Vishay Precision Group MOSFETs IRFBE30LPBF

N channel ;VBRDSS 800 V; RDSon 3000 mO

N channel ;VBRDSS 800 V; RDSon 3000 mO

N channel ;VBRDSS 800 V; RDSon 3000 mO

N-Channel MOSFET, 800V, 4.1A, 3R, TO-262 Product overview: IRFBE30LPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800V, 4.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 4.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBE30LPBF can be used for catalog matching and distributor lookup.

N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole I2PAK

Manufacturer: Vishay Siliconix
Win Source Part Number: 777049-IRFBE30LPBF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Family Name: IRFBE30L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 78nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1300pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
Alternative Parts (Cross-Reference): FQI4N80; FQI4N80TU; 2SK3458-S-AZ; STB4NC80Z-1;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance