N channel ;VBRDSS 800 V; RDSon 3000 mO
N channel ;VBRDSS 800 V; RDSon 3000 mO
N channel ;VBRDSS 800 V; RDSon 3000 mO
N-Channel 800V 4.1A (Tc) 125W (Tc) Through Hole I2PAK
Manufacturer: Vishay Siliconix
Win Source Part Number: 777049-IRFBE30LPBF
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Family Name: IRFBE30L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: I2PAK
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 78nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1300pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
Alternative Parts (Cross-Reference): FQI4N80; FQI4N80TU; 2SK3458-S-AZ; STB4NC80Z-1;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
MOSFET N-CH 800V 4.1A I2PAK
N CHANNEL MOSFET, 800V, 4.1A I2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| RS Components, Ltd. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1808664P | IRFBE30LPBF-ND | 777049-IRFBE30LPBF | IRFBE30LPBF | IRFBE30LPBF | 63J6694 |
| Product Name | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBE30LPBF | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 800V, 4.1A I2-Pak; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | ||||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | SOT3 | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-3 | ||
| PD | 125000 milliwatts |
