The IRFBC40PBF is a third-generation N-channel MOSFET in a TO-220AB package, designed for high-voltage switching applications with a drain-source voltage rating of 600 V and a continuous drain current of 6.2 A at 25 °C. It features a maximum on-state resistance of 1.2 Ω at 10 V gate-source voltage, a total gate charge of 60 nC, and is rated for repetitive avalanche current up to 6.2 A and single pulse avalanche energy of 570 mJ. The device supports fast switching and has a junction temperature range from -55 °C to +150 °C. The package has a thermal resistance from junction to case of 1.0 °C/W and from case to sink of 0.50 °C/W when greased. This part is lead-free and complies with RoHS requirements.
N CHANNEL MOSFET, 600V, 6.2A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26AC0500 |
| Product Name | N Channel Mosfet, 600V, 6.2A To-220; Channel Type Vishay |
| Polarity | N-Channel |