N-Channel 600V 6.2A (Tc) 3.1W (Ta), 130W (Tc) Through Hole TO-262-3
Manufacturer: Vishay
Win Source Part Number: 205354-IRFBC40LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
MOSFET N-CH 600V 6.2A TO262-3
MOSFET N-CH 600V HEXFET MOSFET TO-26
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFBC40LPBF-ND | 205354-IRFBC40LPBF | IRFBC40LPBF | IRFBC40LPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40LPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | SOT3; TO-262-3 | TO-262-3 Long Leads, I2PAK, TO-262AA | |
| V(BR)DSS | 600 volts |
