Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFBC40ASTRRPBF

Description
N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFBC40ASTRRPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBC40ASTRRPBF-ND
Single FETs, MOSFETs IRFBC40ASTRRPBF-ND
N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
600V 6.2A MOSFET Transistor
278-IRFBC40ASTRRPBF
600V 6.2A MOSFET Transistor 278-IRFBC40ASTRRPBF
600V 6.2A N-CH MOSFET, 1.2R Rds(on), D2PAK Product overview: IRFBC40ASTRRPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBC40ASTRRPBF can be used for catalog matching and distributor lookup.

600V 6.2A N-CH MOSFET, 1.2R Rds(on), D2PAK Product overview: IRFBC40ASTRRPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBC40ASTRRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40ASTRRPBF - 205353-IRFBC40ASTRRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40ASTRRPBF
205353-IRFBC40ASTRRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40ASTRRPBF 205353-IRFBC40ASTRRPBF
Manufacturer: Vishay Win Source Part Number: 205353-IRFBC40ASTRRP BF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1036pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 205353-IRFBC40ASTRRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1036pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Chan 600V 6.2 Amp

MOSFET N-Chan 600V 6.2 Amp

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC40ASTRRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBC40ASTRRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBC40ASTRRPBF
MOSFET N-CH 600V 6.2A D2PAK

MOSFET N-CH 600V 6.2A D2PAK

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFBC40ASTRRPBF-ND 278-IRFBC40ASTRRPBF 205353-IRFBC40ASTRRPBF IRFBC40ASTRRPBF IRFBC40ASTRRPBF
Product Name Single FETs, MOSFETs 600V 6.2A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40ASTRRPBF MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PD 125000 milliwatts 125000 milliwatts
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