N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
N-Channel MOSFET, 600V, 6.2A, 1.2R, D2PAK, SM Product overview: IRFBC40ASPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBC40ASPBF can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 017580-IRFBC40ASPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1036pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
N CHANNEL MOSFET, 600V, 6.2A D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 600V 6.2A D2PAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFBC40ASPBF-ND | 278-IRFBC40ASPBF | 017580-IRFBC40ASPBF | 63J6688 | IRFBC40ASPBF | IRFBC40ASPBF |
| Product Name | Single FETs, MOSFETs | N-Channel 600V 6.2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40ASPBF | N Channel Mosfet, 600V, 6.2A D2-Pak; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; D2PAK | TO-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| PD | 125000 milliwatts | 125000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
