Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40ASPBF IRFBC40ASPBF

Description
Manufacturer: Vishay Win Source Part Number: 017580-IRFBC40ASPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1036pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 017580-IRFBC40ASPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1036pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40ASPBF - 017580-IRFBC40ASPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40ASPBF
017580-IRFBC40ASPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40ASPBF 017580-IRFBC40ASPBF
Manufacturer: Vishay Win Source Part Number: 017580-IRFBC40ASPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1036pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017580-IRFBC40ASPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1036pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFBC40ASPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBC40ASPBF-ND
Single FETs, MOSFETs IRFBC40ASPBF-ND
N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 6.2A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
N-Channel 600V 6.2A MOSFET Transistor
278-IRFBC40ASPBF
N-Channel 600V 6.2A MOSFET Transistor 278-IRFBC40ASPBF
N-Channel MOSFET, 600V, 6.2A, 1.2R, D2PAK, SM Product overview: IRFBC40ASPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBC40ASPBF can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 600V, 6.2A, 1.2R, D2PAK, SM Product overview: IRFBC40ASPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 6.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBC40ASPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC40ASPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBC40ASPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBC40ASPBF
MOSFET N-CH 600V 6.2A D2PAK

MOSFET N-CH 600V 6.2A D2PAK

Supplier's Site
N Channel Mosfet, 600V, 6.2A D2-Pak; Channel Type Vishay - 63J6688 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 600V, 6.2A D2-Pak; Channel Type Vishay
63J6688
N Channel Mosfet, 600V, 6.2A D2-Pak; Channel Type Vishay 63J6688
N CHANNEL MOSFET, 600V, 6.2A D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 600V, 6.2A D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Chan 600V 6.2 Amp

MOSFET N-Chan 600V 6.2 Amp

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017580-IRFBC40ASPBF IRFBC40ASPBF-ND 278-IRFBC40ASPBF IRFBC40ASPBF 63J6688 IRFBC40ASPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC40ASPBF Single FETs, MOSFETs N-Channel 600V 6.2A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 600V, 6.2A D2-Pak; Channel Type Vishay MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 125000 milliwatts 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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