Vishay Intertechnology, Inc. N-Channel 600V 3.6A 2.2 Ohm MOSFET Transistor IRFBC30STRLPBF

600V 3.6A N-Channel MOSFET, 2.2 Ohm, D2PAK Product overview: IRFBC30STRLPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 3.6A, 2.2 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3.6A, 2.2 Ohm, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IRFBC30STRLPBF can be used for catalog matching and distributor lookup.

N-Channel 600V 3.6A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

Manufacturer: Vishay
Win Source Part Number: 205352-IRFBC30STRLPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Family Name: IRFBC30S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 660pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V
Alternative Parts (Cross-Reference): SiHFBC30S-E3; SPB02N60S5; SPB02N60S5XT; FQB5N60CTM;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance