Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30PBF IRFBC30PBF

Description
Manufacturer: Vishay Win Source Part Number: 017576-IRFBC30PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 660pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30PBF - 017576-IRFBC30PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFBC30PBF-ND - DigiKey
    DigiKey
  • MOSFETs - 5429507 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1780840 - RS Components, Ltd.
    RS Components, Ltd.
  • Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-220AB - 880-IRFBC30PBF - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC30PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 600V, 3.6A, To-220 Rohs Compliant Vishay - 56AJ9858 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 017576-IRFBC30PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 660pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30PBF - 017576-IRFBC30PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30PBF
017576-IRFBC30PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30PBF 017576-IRFBC30PBF
Manufacturer: Vishay Win Source Part Number: 017576-IRFBC30PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 660pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 017576-IRFBC30PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 660pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFBC30PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBC30PBF-ND
Single FETs, MOSFETs IRFBC30PBF-ND
N-Channel 600V 3.6A (Tc) 74W (Tc) Through Hole TO-220AB

N-Channel 600V 3.6A (Tc) 74W (Tc) Through Hole TO-220AB

Buy Now Datasheet
MOSFETs - 5429507 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
5429507
MOSFETs 5429507
MOSFET N-Channel 600V 3.6A TO220AB

MOSFET N-Channel 600V 3.6A TO220AB

Supplier's Site
MOSFETs - 1780840 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1780840
MOSFETs 1780840
MOSFET N-Channel 600V 3.6A TO220AB

MOSFET N-Channel 600V 3.6A TO220AB

Supplier's Site
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 600V 3.6A MOSFET Transistor
278-IRFBC30PBF
N-Channel 600V 3.6A MOSFET Transistor 278-IRFBC30PBF
600V 3.6A N-Channel MOSFET TO-220AB 2.2R Product overview: IRFBC30PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBC30PBF can be used for catalog matching and distributor lookup.

600V 3.6A N-Channel MOSFET TO-220AB 2.2R Product overview: IRFBC30PBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBC30PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFBC30PBF
MOSFET IRFBC30PBF
MOSFET N-CH 600V HEXFET MOSFET

MOSFET N-CH 600V HEXFET MOSFET

Buy Now Datasheet
Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-220AB - 880-IRFBC30PBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-220AB
880-IRFBC30PBF
Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-220AB 880-IRFBC30PBF
Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-220AB

Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-220AB

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC30PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBC30PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBC30PBF
MOSFET N-CH 600V 3.6A TO220AB

MOSFET N-CH 600V 3.6A TO220AB

Supplier's Site
Mosfet, N-Ch, 600V, 3.6A, To-220 Rohs Compliant Vishay - 56AJ9858 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 3.6A, To-220 Rohs Compliant Vishay
56AJ9858
Mosfet, N-Ch, 600V, 3.6A, To-220 Rohs Compliant Vishay 56AJ9858
MOSFET, N-CH, 600V, 3.6A, TO-220 ROHS COMPLIANT: YES

MOSFET, N-CH, 600V, 3.6A, TO-220 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017576-IRFBC30PBF IRFBC30PBF-ND 5429507 278-IRFBC30PBF IRFBC30PBF 880-IRFBC30PBF IRFBC30PBF 56AJ9858
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30PBF Single FETs, MOSFETs MOSFETs N-Channel 600V 3.6A MOSFET Transistor MOSFET Trans MOSFET N-CH 600V 3.6A 3-Pin(3+Tab) TO-220AB Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 3.6A, To-220 Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 74000 milliwatts 74000 milliwatts 74000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; To-220ab TO-220; TO-220-3 TO-3; TO-220
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