Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30LPBF IRFBC30LPBF

Description
Manufacturer: Vishay Win Source Part Number: 205351-IRFBC30LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 660pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 205351-IRFBC30LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 660pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30LPBF - 205351-IRFBC30LPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30LPBF
205351-IRFBC30LPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30LPBF 205351-IRFBC30LPBF
Manufacturer: Vishay Win Source Part Number: 205351-IRFBC30LPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 660pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 205351-IRFBC30LPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 660pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC30LPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBC30LPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBC30LPBF
MOSFET N-CH 600V 3.6A TO262-3

MOSFET N-CH 600V 3.6A TO262-3

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 205351-IRFBC30LPBF IRFBC30LPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30LPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 3100 to 74000 milliwatts
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