Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30APBF IRFBC30APBF

Description
Manufacturer: Vishay Win Source Part Number: 205350-IRFBC30APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 510pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30APBF - 205350-IRFBC30APBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFBC30APBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC30APBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 16352653 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 205350-IRFBC30APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 510pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30APBF - 205350-IRFBC30APBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30APBF
205350-IRFBC30APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30APBF 205350-IRFBC30APBF
Manufacturer: Vishay Win Source Part Number: 205350-IRFBC30APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 510pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 205350-IRFBC30APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFBC30APBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBC30APBF-ND
Single FETs, MOSFETs IRFBC30APBF-ND
N-Channel 600V 3.6A (Tc) 74W (Tc) Through Hole TO-220AB

N-Channel 600V 3.6A (Tc) 74W (Tc) Through Hole TO-220AB

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 600V 3.6A MOSFET Transistor
278-IRFBC30APBF
N-Channel 600V 3.6A MOSFET Transistor 278-IRFBC30APBF
600V 3.6A N-Channel MOSFET TO-220AB 2.2R Product overview: IRFBC30APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBC30APBF can be used for catalog matching and distributor lookup.

600V 3.6A N-Channel MOSFET TO-220AB 2.2R Product overview: IRFBC30APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 3.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBC30APBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC30APBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBC30APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBC30APBF
MOSFET N-CH 600V 3.6A TO220AB

MOSFET N-CH 600V 3.6A TO220AB

Supplier's Site
Transistor - 16352653 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16352653
Transistor 16352653
POWER MOSFET, N CHANNEL, 3.6 A, 600 V, 2.2 OHM, 10 V, 4.5 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

POWER MOSFET, N CHANNEL, 3.6 A, 600 V, 2.2 OHM, 10 V, 4.5 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFBC30APBF
MOSFET IRFBC30APBF
MOSFET N-CH 600V HEXFET MOSFET

MOSFET N-CH 600V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Radwell International VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205350-IRFBC30APBF IRFBC30APBF-ND 278-IRFBC30APBF IRFBC30APBF 16352653 IRFBC30APBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30APBF Single FETs, MOSFETs N-Channel 600V 3.6A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 74000 milliwatts 74000 milliwatts
Unlock Full Specs
to access all available technical data