Vishay Precision Group Single FETs, MOSFETs IRFBC30ALPBF

Description
N-Channel 600V 3.6A (Tc) 74W (Tc) Through Hole I2PAK
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Description
N-Channel 600V 3.6A (Tc) 74W (Tc) Through Hole I2PAK
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IRFBC30ALPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBC30ALPBF-ND
Single FETs, MOSFETs IRFBC30ALPBF-ND
N-Channel 600V 3.6A (Tc) 74W (Tc) Through Hole I2PAK

N-Channel 600V 3.6A (Tc) 74W (Tc) Through Hole I2PAK

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30ALPBF - 205349-IRFBC30ALPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30ALPBF
205349-IRFBC30ALPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30ALPBF 205349-IRFBC30ALPBF
Manufacturer: Vishay Win Source Part Number: 205349-IRFBC30ALPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3.6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 510pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 205349-IRFBC30ALPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3.6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.2 Ohm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC30ALPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBC30ALPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBC30ALPBF
MOSFET N-CH 600V 3.6A I2PAK

MOSFET N-CH 600V 3.6A I2PAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 600V HEXFET MOSFET TO-26

MOSFET N-CH 600V HEXFET MOSFET TO-26

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFBC30ALPBF-ND 205349-IRFBC30ALPBF IRFBC30ALPBF IRFBC30ALPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC30ALPBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; I2PAK TO-262-3 Long Leads, I2PAK, TO-262AA
V(BR)DSS 600 volts
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