Vishay Precision Group Single FETs, MOSFETs IRFBC20PBF

Description
MOSFET N-CH 600V 2.2A TO220AB
  • Single FETs, MOSFETs - IRFBC20PBF - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC20PBF - 017575-IRFBC20PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFBC20PBF-ND - DigiKey
    DigiKey
  • N Channel Mosfet, 600V, 2.2A To-220; Transistor Polarity Vishay - 63J6679 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N-Ch, 600V, 2.2A, To-220 Rohs Compliant Vishay - 56AJ9857 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC20PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 600V 2.2A TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFBC20PBF - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFBC20PBF
Single FETs, MOSFETs IRFBC20PBF
MOSFET N-CH 600V 2.2A TO220AB

MOSFET N-CH 600V 2.2A TO220AB

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC20PBF - 017575-IRFBC20PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC20PBF
017575-IRFBC20PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC20PBF 017575-IRFBC20PBF
Manufacturer: Vishay Win Source Part Number: 017575-IRFBC20PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 18nC @ 10V Max Input Capacitance: 350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 Ohm @ 1.3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 017575-IRFBC20PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.4 Ohm @ 1.3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IRFBC20PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFBC20PBF-ND
Single FETs, MOSFETs IRFBC20PBF-ND
N-Channel 600V 2.2A (Tc) 50W (Tc) Through Hole TO-220AB

N-Channel 600V 2.2A (Tc) 50W (Tc) Through Hole TO-220AB

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFBC20PBF
MOSFET IRFBC20PBF
MOSFET N-CH 600V HEXFET MOSFET

MOSFET N-CH 600V HEXFET MOSFET

Buy Now Datasheet
N Channel Mosfet, 600V, 2.2A To-220; Transistor Polarity Vishay - 63J6679 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 600V, 2.2A To-220; Transistor Polarity Vishay
63J6679
N Channel Mosfet, 600V, 2.2A To-220; Transistor Polarity Vishay 63J6679
N CHANNEL MOSFET, 600V, 2.2A TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2.2A; On Resistance Rds(on):4.4ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 600V, 2.2A TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2.2A; On Resistance Rds(on):4.4ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

Supplier's Site
Mosfet, N-Ch, 600V, 2.2A, To-220 Rohs Compliant Vishay - 56AJ9857 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 2.2A, To-220 Rohs Compliant Vishay
56AJ9857
Mosfet, N-Ch, 600V, 2.2A, To-220 Rohs Compliant Vishay 56AJ9857
MOSFET, N-CH, 600V, 2.2A, TO-220 ROHS COMPLIANT: YES

MOSFET, N-CH, 600V, 2.2A, TO-220 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFBC20PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFBC20PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFBC20PBF
MOSFET N-CH 600V 2.2A TO220AB

MOSFET N-CH 600V 2.2A TO220AB

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFBC20PBF 017575-IRFBC20PBF IRFBC20PBF-ND IRFBC20PBF 63J6679 56AJ9857 IRFBC20PBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBC20PBF Single FETs, MOSFETs MOSFET N Channel Mosfet, 600V, 2.2A To-220; Transistor Polarity Vishay Mosfet, N-Ch, 600V, 2.2A, To-220 Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 2200 milliamps 2200 milliamps
PD 50000 milliwatts 50000 milliwatts
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