Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFBA22N50A IRFBA22N50A

Manufacturer: Vishay
Win Source Part Number: 069464-IRFBA22N50A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 340W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SUPER-220 (TO-273AA)
Dimension: Super-220
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 115nC @ 10V
Max Input Capacitance: 3400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 230 mOhm @ 13.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, SUPER-220, 3 PIN Product overview: IRFBA22N50A from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 24A, 500V, 0.23ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 24A, 500V, 0.23ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFBA22N50A can be used for catalog matching and distributor lookup.