Vishay Precision Group Single FETs, MOSFETs IRFB9N60APBF

Description
N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB
Request a Quote Datasheet
Description
N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFB9N60APBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB9N60APBF-ND
Single FETs, MOSFETs IRFB9N60APBF-ND
N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB

N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N60APBF - 205348-IRFB9N60APBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N60APBF
205348-IRFB9N60APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N60APBF 205348-IRFB9N60APBF
Manufacturer: Vishay Win Source Part Number: 205348-IRFB9N60APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 205348-IRFB9N60APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
600V 9.2A MOSFET Transistor
278-IRFB9N60APBF
600V 9.2A MOSFET Transistor 278-IRFB9N60APBF
600V N-Ch MOSFET, 9.2A, 750mR RdsOn, TO-220AB Product overview: IRFB9N60APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 9.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB9N60APBF can be used for catalog matching and distributor lookup.

600V N-Ch MOSFET, 9.2A, 750mR RdsOn, TO-220AB Product overview: IRFB9N60APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 9.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB9N60APBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 5411922 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
5411922
MOSFETs 5411922
MOSFET N-Channel 600V 9.2A TO220AB

MOSFET N-Channel 600V 9.2A TO220AB

Supplier's Site
MOSFETs - 5411922P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
5411922P
MOSFETs 5411922P
MOSFET N-Channel 600V 9.2A TO220AB

MOSFET N-Channel 600V 9.2A TO220AB

Supplier's Site
MOSFETs - 1780821 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1780821
MOSFETs 1780821
MOSFET N-Channel 600V 9.2A TO220AB

MOSFET N-Channel 600V 9.2A TO220AB

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB9N60APBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB9N60APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB9N60APBF
MOSFET N-CH 600V 9.2A TO220AB

MOSFET N-CH 600V 9.2A TO220AB

Supplier's Site
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V - 70078882 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V
70078882
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V 70078882
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V

MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V

Supplier's Site
Transistor - 16352621 - Radwell International
Willingboro, NJ, United States
Transistor
16352621
Transistor 16352621
MOSFET, N-CH, 600V, 9.2A, 150DEG C, 170W; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:600V; CONTINUOUS DRAIN CURRENT ID:9.2A; ON RESISTANCE RDS(ON):0.75OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CH, 600V, 9.2A, 150DEG C, 170W; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:600V; CONTINUOUS DRAIN CURRENT ID:9.2A; ON RESISTANCE RDS(ON):0.75OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
MOSFET N-CH 600V 9.2A TO-220AB - 880-IRFB9N60APBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 9.2A TO-220AB
880-IRFB9N60APBF
MOSFET N-CH 600V 9.2A TO-220AB 880-IRFB9N60APBF
MOSFET N-CH 600V 9.2A TO-220AB

MOSFET N-CH 600V 9.2A TO-220AB

Supplier's Site
Mosfet, N-Ch, 600V, 9.2A, 150Deg C, 170W; Channel Type Vishay - 38K2497 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 9.2A, 150Deg C, 170W; Channel Type Vishay
38K2497
Mosfet, N-Ch, 600V, 9.2A, 150Deg C, 170W; Channel Type Vishay 38K2497
MOSFET, N-CH, 600V, 9.2A, 150DEG C, 170W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 9.2A, 150DEG C, 170W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 600V HEXFET MOSFET

MOSFET N-CH 600V HEXFET MOSFET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Allied Electronics, Inc. Radwell International Utmel Electronic Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFB9N60APBF-ND 205348-IRFB9N60APBF 278-IRFB9N60APBF 5411922 5411922P IRFB9N60APBF 70078882 16352621 880-IRFB9N60APBF 38K2497 IRFB9N60APBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N60APBF 600V 9.2A MOSFET Transistor MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V Transistor MOSFET N-CH 600V 9.2A TO-220AB Mosfet, N-Ch, 600V, 9.2A, 150Deg C, 170W; Channel Type Vishay MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; To-220ab TO-220; TO-220 TO-220; TO-220-3 TO-220 TO-3
V(BR)DSS 600 volts 600 volts 600 volts
PD 170000 milliwatts 170000 milliwatts 170000 milliwatts 170000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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