Manufacturer: Vishay
Win Source Part Number: 205348-IRFB9N60APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB
MOSFET, N-CH, 600V, 9.2A, 150DEG C, 170W; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:600V; CONTINUOUS DRAIN CURRENT ID:9.2A; ON RESISTANCE RDS(ON):0.75OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-Channel 600V 9.2A TO220AB
MOSFET N-Channel 600V 9.2A TO220AB
MOSFET N-Channel 600V 9.2A TO220AB
MOSFET N-CH 600V 9.2A TO-220AB
MOSFET, N-CH, 600V, 9.2A, 150DEG C, 170W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V
MOSFET N-CH 600V 9.2A TO220AB
| Win Source Electronics | DigiKey | Radwell International | RS Components, Ltd. | RS Components, Ltd. | Utmel Electronic Limited | Newark, An Avnet Company | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 205348-IRFB9N60APBF | IRFB9N60APBF-ND | 16352621 | 5411922 | 5411922P | 880-IRFB9N60APBF | 38K2497 | 70078882 | IRFB9N60APBF | IRFB9N60APBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N60APBF | Single FETs, MOSFETs | Transistor | MOSFETs | MOSFETs | MOSFET N-CH 600V 9.2A TO-220AB | Mosfet, N-Ch, 600V, 9.2A, 150Deg C, 170W; Channel Type Vishay | MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | |||||||
| PD | 170000 milliwatts | 170000 milliwatts | 170000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; To-220ab | TO-220; TO-220 | TO-3 | TO-220 | TO-220; TO-220-3 |
