Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N60APBF IRFB9N60APBF

Description
Manufacturer: Vishay Win Source Part Number: 205348-IRFB9N60APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 205348-IRFB9N60APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N60APBF - 205348-IRFB9N60APBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N60APBF
205348-IRFB9N60APBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N60APBF 205348-IRFB9N60APBF
Manufacturer: Vishay Win Source Part Number: 205348-IRFB9N60APBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 9.2A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 49nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 205348-IRFB9N60APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 9.2A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFB9N60APBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB9N60APBF-ND
Single FETs, MOSFETs IRFB9N60APBF-ND
N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB

N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Transistor - 16352621 - Radwell International
Willingboro, NJ, United States
Transistor
16352621
Transistor 16352621
MOSFET, N-CH, 600V, 9.2A, 150DEG C, 170W; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:600V; CONTINUOUS DRAIN CURRENT ID:9.2A; ON RESISTANCE RDS(ON):0.75OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CH, 600V, 9.2A, 150DEG C, 170W; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:600V; CONTINUOUS DRAIN CURRENT ID:9.2A; ON RESISTANCE RDS(ON):0.75OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
MOSFETs - 5411922 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
5411922
MOSFETs 5411922
MOSFET N-Channel 600V 9.2A TO220AB

MOSFET N-Channel 600V 9.2A TO220AB

Supplier's Site
MOSFETs - 5411922P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
5411922P
MOSFETs 5411922P
MOSFET N-Channel 600V 9.2A TO220AB

MOSFET N-Channel 600V 9.2A TO220AB

Supplier's Site
MOSFETs - 1780821 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1780821
MOSFETs 1780821
MOSFET N-Channel 600V 9.2A TO220AB

MOSFET N-Channel 600V 9.2A TO220AB

Supplier's Site
MOSFET N-CH 600V 9.2A TO-220AB - 880-IRFB9N60APBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 9.2A TO-220AB
880-IRFB9N60APBF
MOSFET N-CH 600V 9.2A TO-220AB 880-IRFB9N60APBF
MOSFET N-CH 600V 9.2A TO-220AB

MOSFET N-CH 600V 9.2A TO-220AB

Supplier's Site
Mosfet, N-Ch, 600V, 9.2A, 150Deg C, 170W; Channel Type Vishay - 38K2497 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 9.2A, 150Deg C, 170W; Channel Type Vishay
38K2497
Mosfet, N-Ch, 600V, 9.2A, 150Deg C, 170W; Channel Type Vishay 38K2497
MOSFET, N-CH, 600V, 9.2A, 150DEG C, 170W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 9.2A, 150DEG C, 170W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:9.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V - 70078882 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V
70078882
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V 70078882
MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V

MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 600V HEXFET MOSFET

MOSFET N-CH 600V HEXFET MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB9N60APBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB9N60APBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB9N60APBF
MOSFET N-CH 600V 9.2A TO220AB

MOSFET N-CH 600V 9.2A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Radwell International RS Components, Ltd. RS Components, Ltd. Utmel Electronic Limited Newark, An Avnet Company Allied Electronics, Inc. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 205348-IRFB9N60APBF IRFB9N60APBF-ND 16352621 5411922 5411922P 880-IRFB9N60APBF 38K2497 70078882 IRFB9N60APBF IRFB9N60APBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB9N60APBF Single FETs, MOSFETs Transistor MOSFETs MOSFETs MOSFET N-CH 600V 9.2A TO-220AB Mosfet, N-Ch, 600V, 9.2A, 150Deg C, 170W; Channel Type Vishay MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.75Ohm;ID 9.2A;TO-220AB;PD 170W;VGS +/-30V MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts 600 volts
PD 170000 milliwatts 170000 milliwatts 170000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; To-220ab TO-220; TO-220 TO-3 TO-220 TO-220; TO-220-3
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