Vishay Intertechnology, Inc. Single FETs, MOSFETs IRFB9N30A

N-Channel 300V 9.3A (Tc) 96W (Tc) Through Hole TO-220AB

Manufacturer: Vishay
Win Source Part Number: 1046832-IRFB9N30A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 96W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 9.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 920pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 450 mOhm @ 5.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 300V 9.3A TO220AB Product overview: IRFB9N30A from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300V, 9.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 300V, 9.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB9N30A can be used for catalog matching and distributor lookup.