N-Channel 500V 20A (Tc) 280W (Tc) Through Hole TO-220AB
Manufacturer: Vishay
Win Source Part Number: 089715-IRFB20N50KPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 2870pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 250 mOhm @ 12A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
MOSFET N-CH 500V 20A TO220AB
500V 20A N-Channel MOSFET TO-220AB 250mR Rds(on) Product overview: IRFB20N50KPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB20N50KPBF can be used for catalog matching and distributor lookup.
N CHANNEL MOSFET, 500V, 20A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 500V 20A TO220AB
MOSFET RECOMMENDED ALT 844-IRFB20N50K
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFB20N50KPBF-ND | 089715-IRFB20N50KPBF | IRFB20N50KPBF | 278-IRFB20N50KPBF | 63J6711 | IRFB20N50KPBF | IRFB20N50KPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB20N50KPBF | Single FETs, MOSFETs | N-Channel 500V 20A MOSFET Transistor | N Channel Mosfet, 500V, 20A, To-220Ab; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-3; TO-220 | TO-220; TO-220-3 | ||
| V(BR)DSS | 500 volts | 500 volts | |||||
| PD | 280000 milliwatts | 280000 milliwatts | 280000 milliwatts |