500V N-Channel MOSFET, 18A, 290mR Rds On, TO-220AB Product overview: IRFB18N50KPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB18N50KPBF can be used for catalog matching and distributor lookup.
N-Channel 500V 17A (Tc) 220W (Tc) Through Hole TO-220AB
MOSFET N-CH 500V 17A TO220AB
Manufacturer: Vishay Siliconix
Win Source Part Number: 1187489-IRFB18N50KPB
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 220W
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 17A
Rds On (Maximum) at Id, Vgs: 290mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 120nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 2830pF at 25V
N CHANNEL MOSFET, 500V, 17A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
MOSFET RECOMMENDED ALT 781-SIHP18N50C-E3
MOSFET N-CH 500V 17A TO220AB
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.26Ohm;ID 17A;TO-220AB;PD 220W;VGS +/-30V
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 500V, 0.29OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IRFB18N50KPBF | IRFB18N50KPBF-ND | IRFB18N50KPBF | 1187489-IRFB18N50KPBF | 63J6710 | IRFB18N50KPBF | IRFB18N50KPBF | 70078881 | 16352613 |
| Product Name | N-Channel 500V 18A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Electronic Surplus - IRFB18N50KPBF | N Channel Mosfet, 500V, 17A, To-220; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.26Ohm;ID 17A;TO-220AB;PD 220W;VGS +/-30V | Transistor |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| PD | 220000 milliwatts | 220000 milliwatts | 220000 milliwatts | 220000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3 | TO-3; TO-220 | TO-220; TO-220-3 | TO-220 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
