Vishay Intertechnology, Inc. Electronic Surplus - IRFB18N50KPBF IRFB18N50KPBF

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187489-IRFB18N50KPB F Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 220W Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 17A Rds On (Maximum) at Id, Vgs: 290mOhm at 10A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 120nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 2830pF at 25V
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 1187489-IRFB18N50KPB F Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 220W Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 17A Rds On (Maximum) at Id, Vgs: 290mOhm at 10A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 120nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 2830pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
Electronic Surplus - IRFB18N50KPBF - 1187489-IRFB18N50KPBF - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IRFB18N50KPBF
1187489-IRFB18N50KPBF
Electronic Surplus - IRFB18N50KPBF 1187489-IRFB18N50KPBF
Manufacturer: Vishay Siliconix Win Source Part Number: 1187489-IRFB18N50KPB F Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 220W Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 17A Rds On (Maximum) at Id, Vgs: 290mOhm at 10A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 120nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 2830pF at 25V

Manufacturer: Vishay Siliconix
Win Source Part Number: 1187489-IRFB18N50KPBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 220W
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 17A
Rds On (Maximum) at Id, Vgs: 290mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 120nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 2830pF at 25V

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Singapore
N-Channel 500V 18A MOSFET Transistor
278-IRFB18N50KPBF
N-Channel 500V 18A MOSFET Transistor 278-IRFB18N50KPBF
500V N-Channel MOSFET, 18A, 290mR Rds On, TO-220AB Product overview: IRFB18N50KPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB18N50KPBF can be used for catalog matching and distributor lookup.

500V N-Channel MOSFET, 18A, 290mR Rds On, TO-220AB Product overview: IRFB18N50KPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB18N50KPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFB18N50KPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB18N50KPBF-ND
Single FETs, MOSFETs IRFB18N50KPBF-ND
N-Channel 500V 17A (Tc) 220W (Tc) Through Hole TO-220AB

N-Channel 500V 17A (Tc) 220W (Tc) Through Hole TO-220AB

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Single FETs, MOSFETs - IRFB18N50KPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFB18N50KPBF
Single FETs, MOSFETs IRFB18N50KPBF
MOSFET N-CH 500V 17A TO220AB

MOSFET N-CH 500V 17A TO220AB

Supplier's Site Datasheet
N Channel Mosfet, 500V, 17A, To-220; Channel Type Vishay - 63J6710 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 500V, 17A, To-220; Channel Type Vishay
63J6710
N Channel Mosfet, 500V, 17A, To-220; Channel Type Vishay 63J6710
N CHANNEL MOSFET, 500V, 17A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 500V, 17A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.26Ohm;ID 17A;TO-220AB;PD 220W;VGS +/-30V
70078881
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.26Ohm;ID 17A;TO-220AB;PD 220W;VGS +/-30V 70078881
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.26Ohm;ID 17A;TO-220AB;PD 220W;VGS +/-30V

MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.26Ohm;ID 17A;TO-220AB;PD 220W;VGS +/-30V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB18N50KPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB18N50KPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB18N50KPBF
MOSFET N-CH 500V 17A TO220AB

MOSFET N-CH 500V 17A TO220AB

Supplier's Site
Transistor - 16352613 - Radwell International
Willingboro, NJ, United States
Transistor
16352613
Transistor 16352613
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 500V, 0.29OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 500V, 0.29OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
MOSFET RECOMMENDED ALT 781-SIHP18N50C-E3

MOSFET RECOMMENDED ALT 781-SIHP18N50C-E3

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Newark, An Avnet Company Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited Radwell International VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1187489-IRFB18N50KPBF 278-IRFB18N50KPBF IRFB18N50KPBF-ND IRFB18N50KPBF 63J6710 70078881 IRFB18N50KPBF 16352613 IRFB18N50KPBF
Product Name Electronic Surplus - IRFB18N50KPBF N-Channel 500V 18A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs N Channel Mosfet, 500V, 17A, To-220; Channel Type Vishay MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.26Ohm;ID 17A;TO-220AB;PD 220W;VGS +/-30V Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts 500 volts 500 volts
PD 220000 milliwatts 220000 milliwatts 220000 milliwatts 220000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220 TO-220 TO-220; TO-220-3
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