500V 16A N-Channel MOSFET TO-220AB, 320mR Rds(on) Product overview: IRFB17N50LPBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB17N50LPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 500V 16A TO220AB
N-Channel 500V 16A (Tc) 220W (Tc) Through Hole TO-220AB
N channel ;VBRDSS 500 V; RDSon 320 mOh
N channel ;VBRDSS 500 V; RDSon 320 mOh
N channel ;VBRDSS 500 V; RDSon 320 mOh
Manufacturer: Vishay
Win Source Part Number: 1046804-IRFB17N50LPB
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 220W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 2760pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 320 mOhm @ 9.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 500V 16A TO220AB
N CHANNEL MOSFET, 500V, 16A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 500V HEXFET MOSFET
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFB17N50LPBF | IRFB17N50LPBF | IRFB17N50LPBF-ND | 1808623 | 1046804-IRFB17N50LPBF | IRFB17N50LPBF | 63J6708 | IRFB17N50LPBF |
| Product Name | N-Channel 500V 16A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB17N50LPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 500V, 16A, To-220; Channel Type Vishay | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 220000 milliwatts | 220000 milliwatts | 220000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
