500V 11A N-Channel MOSFET TO-220AB Product overview: IRFB11N50APBF from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB11N50APBF can be used for catalog matching and distributor lookup.
N-Channel 500V 11A (Tc) 170W (Tc) Through Hole TO-220AB
MOSFET N-Channel 500V 11A TO220AB
Manufacturer: Vishay
Win Source Part Number: 017570-IRFB11N50APBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 170W (Tc)
Family Name: IRFB11N50A
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 1423pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 520 mOhm @ 6.6A, 10V
Alternative Parts (Cross-Reference): PJP13N50; STP13NK50Z; FDP12N50NZ; AOT12N50L;
Introduction Date: March 27, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 500V, 0.52OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 500V HEXFET MOSFET
MOSFET N-CHANNEL 500V ROHS COMPLIANT: NO
MOSFET, N-CH, 500V, 11A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Radwell International | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFB11N50APBF | IRFB11N50APBF-ND | 5411944 | 5411944P | 017570-IRFB11N50APBF | 16352589 | IRFB11N50APBF | 81AC8863 | 38K2474 |
| Product Name | N-Channel 500V 11A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB11N50APBF | Transistor | MOSFET | Mosfet N-Channel 500V Rohs Compliant Vishay | Mosfet, N-Ch, 500V, 11A, To-220; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 170000 milliwatts | 170000 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | TO-220; TO-220-3 | TO-220; To-220ab | TO-220; TO-220 | TO-220; SOT3; TO-220AB | TO-3 | TO-3; TO-220 | |||
| MOSFET Operating Mode | Enhancement |
